A comprehensive and detailed study of the composition dependence of lattice constants,
band gaps and band offsets has been performed for bulk Ge 1− x Sn x alloy in the full …

A full-zone 30-band k· p model is developed as an efficient and reliable tool to compute
electronic band structure in Ge 1− x Sn x alloy. The model was first used to reproduce the …

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …

A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20
000 cm2 V− 1 s− 1 is given. Both the Shubnikov–de Haas oscillations and integer quantum …

In this work we study the nature of the band gap in GeSn alloys for use in silicon-based
lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from …

It is shown that compressively strained Ge1− xSnx/Ge quantum wells (QWs) grown on a Ge
substrate with 0.1≤ x≤ 0.2 and width of 8 nm≤ d≤ 14 nm are a very promising gain …

Ge1–x Sn x epitaxial heterostructures are emerging as prominent candidates for the
monolithic integration of light sources on Si substrates. Here we propose a suitable …

This work presents normal-incidence p+-pnn+ Ge/Ge 1-x Sn x (x= 6–12%) heterojunction
photodetectors (PDs) on germanium-tin-on-insulator (GeSnOI) substrate for mid-infrared …

We demonstrate an effective epitaxial route for the manipulation and further enrichment of
the intriguing spin-dependent phenomena boasted by germanium. We show optical …

The pseudomorphic growth of Ge 1− x Sn x on Ge causes in-plane compressive strain,
which degrades the superior properties of the Ge 1− x Sn x alloys. Therefore, efficient strain …