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Relationship between resistive switching characteristics and band diagrams of junctions
S Asanuma, H Akoh, H Yamada, A Sawa - Physical Review B—Condensed …, 2009 - APS
We investigated the Ca-composition dependence of the resistive switching (RS)
characteristics and band diagrams in Ti/Pr 1− x Ca x MnO 3 [PCMO (x)] junctions and the …
characteristics and band diagrams in Ti/Pr 1− x Ca x MnO 3 [PCMO (x)] junctions and the …
Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering
The ability to change states using voltage in ferroelectric tunnel junctions (FTJs) offers a
route for lowering the switching energy of memories. Enhanced tunneling electroresistance …
route for lowering the switching energy of memories. Enhanced tunneling electroresistance …
Evidence for pseudo–Jahn-Teller distortions in the charge density wave phase of
The charge density wave (CDW) instability in 1 T-TiSe 2 is revisited to investigate its
electronic and structural origins using angle resolved photoemission spectroscopy (ARPES) …
electronic and structural origins using angle resolved photoemission spectroscopy (ARPES) …
A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3
Resistive random access memory based on the resistive switching phenomenon is
emerging as a strong candidate for next generation non-volatile memory. So far, the resistive …
emerging as a strong candidate for next generation non-volatile memory. So far, the resistive …
Chemical insight into electroforming of resistive switching manganite heterostructures
We have investigated the role of the electroforming process in the establishment of resistive
switching behaviour for Pt/Ti/Pr0. 5Ca0. 5MnO3/SrRuO3 layered heterostructures …
switching behaviour for Pt/Ti/Pr0. 5Ca0. 5MnO3/SrRuO3 layered heterostructures …
Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron
Oxide semiconductors and their application in next‐generation devices have received a
great deal of attention due to their various optical, electric, and magnetic properties. For …
great deal of attention due to their various optical, electric, and magnetic properties. For …
Two-step synthesis and visible-light-driven photocatalytic water oxidation activity of AW (O, N) 3 (A= Sr, La, Pr, Nd and Eu) perovskites
To expand the family of transition metal oxynitride perovskites, the two-step synthesis of a
series of tungsten-based metal oxynitride perovskites (EuW (O, N) 3, NdW (O, N) 3, PrW (O …
series of tungsten-based metal oxynitride perovskites (EuW (O, N) 3, NdW (O, N) 3, PrW (O …
Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0. 7Sr0. 3MnO3 thin films
This study demonstrated that the resistive switching voltage of perovskite manganite
material could be controlled by A-site cation substitution in “A” MnO 3 perovskite manganite …
material could be controlled by A-site cation substitution in “A” MnO 3 perovskite manganite …
Valence state of cations in manganites Pr1-xCaxMnO3 (0.3≤ x≤ 0.5) from X-ray diffraction and X-ray photoelectron spectroscopy
Abstract Polycrystalline Pr 1-x Ca x MnO 3 (х= 0.3, 0.35, 04, 0.45, and 0.5) samples are
synthesized by solid-state reaction method. Crystal structure of the samples is studied by X …
synthesized by solid-state reaction method. Crystal structure of the samples is studied by X …
Crystal asymmetry and low-angle grain boundary governed persistent photoinduced magnetization in small bandwidth manganites
S Majumdar, T Elovaara, H Huhtinen… - Journal of Applied …, 2013 - pubs.aip.org
Persistent photo-induced magnetization (PPM) in low bandwidth manganite Pr 1− x Ca x
MnO 3 (PCMO) thin film is reported in the low hole doped regime (x= 0.1). X-ray diffraction, x …
MnO 3 (PCMO) thin film is reported in the low hole doped regime (x= 0.1). X-ray diffraction, x …