Silicon is widespread in modern electronics, but its electronic bandgap prevents the
detection of infrared radiation at wavelengths above 1,100 nanometers, which limits its …

Infrared detection technology plays an important role in remote sensing, imaging,
monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and …

A PbSe colloidal quantum dot (QD) is typically a solution-processed semiconductor for near-
infrared (NIR) optoelectronic applications. However, the wide application of PbSe QDs has …

Integrating lead sulfide (PbS) colloidal quantum dots (CQDs) with crystalline silicon (c-Si)
has been proven to be an effective strategy in extending the sensitivity of Si-based …

Traditional photodetectors usually respond to photons larger than the bandgap of a
photosensitive material. In contrast to traditional photodetectors for broad-spectrum …

The integration of silicon and infrared-sensitive materials to manufacture infrared detectors
is very promising. However, the combination of silicon and colloidal quantum dots (CQDs) to …

Traditional infrared semiconductors with direct narrow bandgaps, such as HgCdTe, InGaAs,
and lead salts (PbS, PbSe, and PbTe), have been commercialized for decades in various …

Photodetectors based on advanced materials with a broad spectral photoresponse, high
sensitivity, huge integration ability, room-temperature operation, and stable environmental …

PbS/silicon composite photodetection structure can effectively extend the detection
wavelength of silicon-based detectors to the near-infrared band, which is an efficient way …

The high carrier mobility in graphene, together with the ease of handling and good optical
properties of colloidal quantum dots, provide high-performance materials for next-generation …