The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …

Antimony material was an important phase change ingredient, but its poor amorphous
stability and high resistance drift limited its application in phase change memory. In this …

The structural features and electrical properties of thin materials developed for phase
change memory (PCRAM 1) are highly influenced by the stoichiometry and the binding …

Phase‐change random access memory is anticipated to break the bottleneck of the “storage
wall” due to its advantages in simultaneous data storage and in‐memory computing …

Transition metal do** is an effective strategy to improve the properties of phase-change
random access memory (PCRAM), while the underlying mechanism remains to be …

To date, operation speed and data retention are still bottlenecks for phase-change memory.
Do** impurity is a practical strategy to improve these performances of phase-change …

High thermal stability, fast operation speed, low thickness variation, and low resistance drift
of phase-change nanomaterials are the essential characteristics in phase-change memory …

Non-volatile memory, which can simultaneously store data and compute in memory, is a
promising candidate to break through “memory bottleneck”. However, its operation speed …

Ovonic threshold switching (OTS) selector is a key technology for high-density crossbar
memory array. The basic characteristics of GeSe OTS material including structural …

Sb 2 Te material is an important base material for phase change memory or optical data
storage, but the poor amorphous stability of Sb 2 Te severely limits its application. In this …