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On the impact of pure PVC and (PVC: Ti) interlayer on the conduction mechanisms and physical parameters of classic metal-semiconductor (MS) Schottky diodes …
ÇŞ Güçlü - Physica B: Condensed Matter, 2024 - Elsevier
In this study, to determine the impacts of PVC and (PVC: Ti) interlayer on the basic electrical
parameters and conduction mechanisms, Au/n-Si (MS), Au/PVC/n-Si (MPS1), and Au/(PVC …
parameters and conduction mechanisms, Au/n-Si (MS), Au/PVC/n-Si (MPS1), and Au/(PVC …
Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers
This study reports a comparative characterization of Au/n-Si Schottky diodes/contacts (SDs)
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
with hydrothermally synthesized ZnO–PVP and ZnO/Ag2WO4–PVP interfacial layers, which …
Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure
In the present work, we have fabricated a highly photo responsive Schottky barrier diode
based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It …
based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It …
Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of …
Au/n-GaAs device was fabricated with an organic PNoMPhPPy thin polymer interfacial layer
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
whose bandgap (E g) was found as 2.95 eV from the (αhν) 2–hν plot. The PNoMPhPPy poly …
Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures
In this study, the real and imaginary components of the complex dielectric (ε*= ε′-jε'′),
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer
The effects of polyvinylchloride (PVC) and samarium oxide-polyvinylchloride (PVC: Sm 2 O
3) polymer interlayers on the electrical characteristics in detail. The fabricated reference …
3) polymer interlayers on the electrical characteristics in detail. The fabricated reference …
Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5%(graphene: PVA) by impedance spectroscopy
The Z–V measurements were performed in wide-range voltage (±6 V), and then the
real/imaginary parts of ε*(ε′, ε ″), M*(M′, M ″), Z*(Z′, Z ″), tan δ, and σ ac values of the …
real/imaginary parts of ε*(ε′, ε ″), M*(M′, M ″), Z*(Z′, Z ″), tan δ, and σ ac values of the …
A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room …
Abstracts In this study, the Au/n-Si structures with and without (CoSO 4–PVP) organic
interlayer were fabricated on the same n-Si wafer and electrical characteristics of them were …
interlayer were fabricated on the same n-Si wafer and electrical characteristics of them were …
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
In this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a
reference sample for comparison with other devices in the literature, especially some …
reference sample for comparison with other devices in the literature, especially some …
Illumination and voltage effects on the forward and reverse bias current–voltage (IV) characteristics in In/In2S3/p-Si photodiodes
The illumination and voltage effects on the IV measurements of the fabricated In/In 2 S 3/p-Si
photodiode were investigated in dark and under various illumination intensities (20–100 …
photodiode were investigated in dark and under various illumination intensities (20–100 …