Strain engineering for transition-metal defects in SiC
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for
applications in quantum technology as some of these defects, eg, vanadium (V), allow for …
applications in quantum technology as some of these defects, eg, vanadium (V), allow for …
Positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient
spin-photon interface. Despite carbon vacancy in silicon carbide being an elementary and …
spin-photon interface. Despite carbon vacancy in silicon carbide being an elementary and …
[HTML][HTML] Formation of paramagnetic defects in the synthesis of silicon carbide
Silicon carbide (SiC) is a very promising platform for quantum information processing, as it
can host room temperature solid state defect quantum bits. These room temperature …
can host room temperature solid state defect quantum bits. These room temperature …
Tunable thermal conductivity of surface phonon polaritons in SiC thin film
C Huang, Y Wang, X Wang - Physica Scripta, 2024 - iopscience.iop.org
As an additional heat carrier besides phonons and electrons, the surface phonon polariton
(SPhPs) possesses a large potential to increase the thermal conductivity. In this work, the …
(SPhPs) possesses a large potential to increase the thermal conductivity. In this work, the …
The microstructure and physical properties of AlN and SiC ceramics after irradiation with 2 MeV Au ions
W Yang, J Wang, Y Zhang, B Ma, W Lu, E Fu… - Applied Surface …, 2023 - Elsevier
The long-term irradiation environment of fusion reactors often induced serious damage to
ceramics as the tritium resistant and functional materials. In this work, silicon carbide (SiC) …
ceramics as the tritium resistant and functional materials. In this work, silicon carbide (SiC) …
A Complete Phase Distribution Map of the Laser Affected Zone and Ablation Debris Formed by Nanosecond Laser-Cutting of SiC
Laser cutting of silicon carbide (SiC) poses significant challenges due to its extreme
hardness and thermal resistance, necessitating high energy input and often leading to …
hardness and thermal resistance, necessitating high energy input and often leading to …
Structural and optical properties of lithium borate glasses under extreme conditions of ion irradiation
S Karthika, K Asokan, K Marimuthu, PE Teresa… - Physica …, 2023 - iopscience.iop.org
Lithium borate (LBO) glasses of the composition 10LiO 2. 90B 2 O 3 were prepared by melt
quenching technique and characterized for morphological, structural, and optical properties …
quenching technique and characterized for morphological, structural, and optical properties …
Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions
SiC-based devices are extensively used in environments subject to radiation, where high-
fluence irradiation causes amorphization and chemical reordering in 4H-SiC. In this article …
fluence irradiation causes amorphization and chemical reordering in 4H-SiC. In this article …
Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering
Abstract In situ thermal annealing (673-1273 K) during X-ray diffraction synchrotron
measurements was performed to monitor the strain level as a proxy to follow the recovery of …
measurements was performed to monitor the strain level as a proxy to follow the recovery of …
The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy
Z Yang, Y Li, M Huang, M Gong, Y Ma - Microelectronics Reliability, 2024 - Elsevier
The evolution of deep levels in n-type 4H-SiC Schottky barrier diodes (SBDs) irradiated with
9.5 MeV/u 209 Bi ions at room temperature was investigated by Deep Level Transient …
9.5 MeV/u 209 Bi ions at room temperature was investigated by Deep Level Transient …