The functional diversification and adaptability of the elementary switching units of
computational circuits are disruptive approaches for advancing electronics beyond the static …

Overcoming the difficulty in the precise definition of the metal phase of metal–Si
heterostructures is among the key prerequisites to enable reproducible next-generation …

Metal silicides have been used in silicon technology as contacts to achieve high device
performance and desired device functions. The growth and applications of silicide materials …

Si1− xGex is a key material in modern complementary metal‐oxide‐semiconductor and
bipolar devices. However, despite considerable efforts in metal‐silicide and‐germanide …

The fabrication and characterization of silicon nanowire (NW) array/spin-on glass (SOG)
composite films for thermoelectric devices are presented. Interference lithography was used …

Initial or residual stress plays an important role in nanoelectronics. Valley degeneracy in
silicon nanowires (SiNWs) is partially lifted due to built-in stresses, and consequently …

To fully exploit the potential of semiconducting nanowires for devices, high quality electrical
contacts are of paramount importance. This work presents a detailed in situ transmission …

Silicides, intermetallic compounds formed by the reaction of a metal and Si, have long been
used as contacts for metal oxide semiconductor (CMOS) transistors and have more become …

The surge in advancing the materials science of solid-state reactions for nanoscale contacts
to advanced semiconductor devices necessitates a comprehensive dissemination and …

Recent advances in nanoscale optoelectronic Ge devices have exposed their enormous
potential for highly sensitive visible and near-infrared CMOS compatible photodetectors. In …