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[HTML][HTML] Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in develo** voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Towards magnonic devices based on voltage-controlled magnetic anisotropy
Despite significant technological advances in miniaturization and operational speed,
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
Reservoir computing with spin waves excited in a garnet film
We propose a reservoir computing device utilizing spin waves that propagate in a garnet film
equipped with multiple input/output electrodes. In recent years, reservoir computing has …
equipped with multiple input/output electrodes. In recent years, reservoir computing has …
Electric field manipulation of spin chirality and skyrmion dynamic
The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction that
stabilizes spin chirality. One scientific and technological challenge is understanding and …
stabilizes spin chirality. One scientific and technological challenge is understanding and …
Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L10 FePt Single Layer
Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L10
phase enables magnetic storage and memory devices with ultrahigh capacity. However …
phase enables magnetic storage and memory devices with ultrahigh capacity. However …
Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
Electric field-induced creation and directional motion of domain walls and skyrmion bubbles
Magnetization dynamics driven by an electric field could provide long-term benefits to
information technologies because of its ultralow power consumption. Meanwhile, the …
information technologies because of its ultralow power consumption. Meanwhile, the …
Progress and application perspectives of voltage‐controlled magnetic tunnel junctions
This article discusses the current state of development, open research opportunities, and
application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the …
application perspectives of electric‐field‐controlled magnetic tunnel junctions that use the …
Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions
Voltage control of spin enables both a zero standby power and ultralow active power
consumption in spintronic devices, such as magnetoresistive random-access memory …
consumption in spintronic devices, such as magnetoresistive random-access memory …
Brownian motion of skyrmion bubbles and its control by voltage applications
Magnetic skyrmions are expected to be promising candidates for information carriers in
spintronic devices. In previous work, precise position control of skyrmions has been the main …
spintronic devices. In previous work, precise position control of skyrmions has been the main …