Doped poly (o-phenylenediamine-co-p-toluidine) fibers for polymer solar cells applications
MS Zoromba, AF Al-Hossainy - Solar Energy, 2020 - Elsevier
Hydrochloric acid doped Poly (o-phenylenediamine-co-p-toluidine)(PoPDApT) is
synthesized at pH~ 0.65, utilizing anhydrous FeCl 3 using oxidative polymerization. The …
synthesized at pH~ 0.65, utilizing anhydrous FeCl 3 using oxidative polymerization. The …
Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode
Difluoro-4-bora-3a, 4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was
synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were …
synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were …
Fabrication of n-TiO2/p-Si Photo-Diodes for Self-Powered Fast Ultraviolet Photodetectors
Fabrication of n-TiO2/p-Si heterojunction devices for the fast solar-blind self-powered
ultraviolet photodetectors has been reported. To produce these devices, n-type TiO2 thin …
ultraviolet photodetectors has been reported. To produce these devices, n-type TiO2 thin …
Electrical performance of nanocrystalline graphene oxide/SiO2-based hybrid heterojunction device
In this study, a nanostructure of graphene oxide films was deposited on the surface of silicon
oxide to form a hybrid heterojunction diode. The characteristics of dielectric were studied in …
oxide to form a hybrid heterojunction diode. The characteristics of dielectric were studied in …
Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode
The polycrystalline ZnGa2Se4 thin film was prepared by thermal evaporation technique on n-
Si wafer followed by annealing at 700K. Then, the Al/p-ZnGa2Se4/n-Si/Al heterojunction …
Si wafer followed by annealing at 700K. Then, the Al/p-ZnGa2Se4/n-Si/Al heterojunction …
Si-based photosensitive diode with novel Zn-doped nicotinate/nicotinamide mixed complex interlayer
Abstract Al/Zn-complex/p-Si/Al metal-polymer-semiconductor (MPS) diode is deposited by
using thermal evaporation technique for metal layers and spin-coating technique for polymer …
using thermal evaporation technique for metal layers and spin-coating technique for polymer …
A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range
The current-voltage characteristics of Au/perylene-monoimide (PMI)/n-Si Schottky device
have been investigated at a wide temperature range between 75 and 300 K in detail. The …
have been investigated at a wide temperature range between 75 and 300 K in detail. The …
High photoresponsivity Ru-doped ZnO/p-Si heterojunction diodes by the sol-gel method
The ruthenium (Ru) doped nanostructure ZnO films were prepared by the sol-gel spin
coating method. Undoped and Ru doped ZnO films are formed as fibers. The optical band …
coating method. Undoped and Ru doped ZnO films are formed as fibers. The optical band …
Coexistence of space charge limited and variable range hop** conduction mechanism in sputter-deposited Au/SiC metal–semiconductor–metal device
Despite being the cornerstone of high-temperature and high-power applications, the
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
Effect of annealing temperature on the physical properties of NiO thin films and ITO/NiO/Al Schottky diodes
P Salunkhe, D Kekuda - Journal of Materials Science: Materials in …, 2022 - Springer
Herein, fabrication and characterisation of p-NiO/Al Schottky barrier diodes have been
realised by dc reactive magnetron sputtering. In addition, effect of post-annealing …
realised by dc reactive magnetron sputtering. In addition, effect of post-annealing …