P-NiO/n-GaN heterostructure diode for temperature sensor application
p-NiO/n-GaN heterostructure diodes with different anode diameters were fabricated and
comprehensively characterized for temperature sensor application. The circular diodes with …
comprehensively characterized for temperature sensor application. The circular diodes with …
Influence of growth interruption on the morphology and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells
Y Hou, B Wang, J Yang, Y Zhang, Z Zhang, F Liang… - Optics …, 2023 - opg.optica.org
The influence of growth interruption on the surface and luminescence properties of
AlGaN/GaN ultraviolet multi-quantum wells (UV MQWs) is investigated. It is found that when …
AlGaN/GaN ultraviolet multi-quantum wells (UV MQWs) is investigated. It is found that when …
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Abstract Nonpolar (11–20) a-plane p-type GaN films were successfully grown on r-plane
sapphire substrate with the metal–organic chemical vapor deposition (MOCVD) system. The …
sapphire substrate with the metal–organic chemical vapor deposition (MOCVD) system. The …
[HTML][HTML] Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy
We report on the improvement of the surface morphology of c-plane GaN films grown at high
growth rates (∼ 1 µm/h) using ammonia molecular beam epitaxy through a series of growth …
growth rates (∼ 1 µm/h) using ammonia molecular beam epitaxy through a series of growth …
Effects of Ⅴ/Ⅲ ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer
The non-polar a-plane Mg-delta-doped p-AlGaN epi-layers with excellent electrical
conduction were achieved on r-plane sapphire substrates via metal organic chemical vapor …
conduction were achieved on r-plane sapphire substrates via metal organic chemical vapor …
Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions
A Fan, X Zhang, S Wang, C Li, S Chen… - Journal of Alloys and …, 2021 - Elsevier
We report on the successful growth of non-polar a-plane p-type Mg-doped AlGaN epi-layers
with various Al compositions by metal organic chemical vapor deposition (MOCVD). The p …
with various Al compositions by metal organic chemical vapor deposition (MOCVD). The p …
Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality
Metal-organic chemical vapor deposition was successfully used to grow un-doped nonpolar
a-plane AlGaN on an r-plane sapphire substrate. High-resolution x-ray (HR-XRD), atomic …
a-plane AlGaN on an r-plane sapphire substrate. High-resolution x-ray (HR-XRD), atomic …