Atomic layer deposition of metals: Precursors and film growth
DJ Hagen, ME Pemble, M Karppinen - Applied Physics Reviews, 2019 - pubs.aip.org
The coating of complex three-dimensional structures with ultrathin metal films is of great
interest for current technical applications, particularly in microelectronics, as well as for basic …
interest for current technical applications, particularly in microelectronics, as well as for basic …
A review on the direct electroplating of polymeric materials
P Augustyn, P Rytlewski, K Moraczewski… - Journal of Materials …, 2021 - Springer
This work is a review of the literature on the possibilities for electroplating of polymer
materials. Methods of metalizing polymers and their composites were presented and …
materials. Methods of metalizing polymers and their composites were presented and …
Atomic layer deposition of Ru for replacing Cu-interconnects
The atomic layer deposition (ALD) of Ru using a metal–organic precursor, tricarbonyl
(trimethylenemethane) ruthenium [Ru (TMM)(CO) 3] and O2 as a reactant is reported. The …
(trimethylenemethane) ruthenium [Ru (TMM)(CO) 3] and O2 as a reactant is reported. The …
Metal ALD and pulsed CVD: Fundamental reactions and links with solution chemistry
DJH Emslie, P Chadha, JS Price - Coordination Chemistry Reviews, 2013 - Elsevier
Atomic layer deposition (ALD) is a thin film deposition technique which operates via
repeated alternating and self-terminating surface-based reactions between a precursor and …
repeated alternating and self-terminating surface-based reactions between a precursor and …
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems
T Waechtler, SF Ding, L Hofmann, R Mothes… - Microelectronic …, 2011 - Elsevier
The deposition of Cu seed layers for electrochemical Cu deposition (ECD) via atomic layer
deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures …
deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures …
Precise control of nanoscale Cu etching via gas-phase oxidation and chemical complexation
We present a cyclic process for selective and anisotropic atomic layer etching of copper: an
oxygen plasma modulates the depth and directionality of the oxidized layer, while formic …
oxygen plasma modulates the depth and directionality of the oxidized layer, while formic …
Chemistry of Cu (acac) 2 on Ni (110) and Cu (110) surfaces: Implications for atomic layer deposition processes
Q Ma, F Zaera - Journal of Vacuum Science & Technology A, 2013 - pubs.aip.org
The thermal chemistry of copper (II) acetylacetonate, Cu (acac) 2, on Ni (110) and Cu (110)
single-crystal surfaces was probed under vacuum by using x-ray photoelectron …
single-crystal surfaces was probed under vacuum by using x-ray photoelectron …
Thermally robust gold and silver iminopyrrolidinates for chemical vapor deposition of metal films
Dimeric silver (I) and gold (I) tert-butyl-imino-2, 2-dimethylpyrrolidinates were synthesized
and characterized by thermal gravimetric analysis (TGA), differential scanning calorimetry …
and characterized by thermal gravimetric analysis (TGA), differential scanning calorimetry …
A Novel laser scanning method for metallization of alumina substrate by copper
Y Hui, ZL Na, BM Sun, XD Sun, JL Chen - Rare Metals, 2023 - Springer
A Novel laser scanning method for metallization of alumina substrate by copper | Rare Metals
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Advances in the deposition chemistry of metal-containing thin films using gas phase processes
Metal thin films are indispensable for the processing of a number of modern devices that
benefit from their electronic, magneto-electric and optical properties. Application trends …
benefit from their electronic, magneto-electric and optical properties. Application trends …