III-nitride semiconductors for intersubband optoelectronics: a review
III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …
Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications
In the last two decades, the third-generation wide bandgap semiconductor III-nitrides have
revolutionized a myriad of electronic and photonic devices and applications, including …
revolutionized a myriad of electronic and photonic devices and applications, including …
Terahertz intersubband absorption in GaN/AlGaN step quantum wells
H Machhadani, Y Kotsar, S Sakr… - Applied Physics …, 2010 - pubs.aip.org
We demonstrate terahertz intersubband absorptions at frequencies of 2.1 THz (λ≈ 143 μ m)
and 4.2 THz (λ≈ 70 μ m) in nitride-based semiconductor quantum wells. The structures …
and 4.2 THz (λ≈ 70 μ m) in nitride-based semiconductor quantum wells. The structures …
[HTML][HTML] Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells
We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN
quantum wells. We find a trend of decreasing peak energy with increasing quantum well …
quantum wells. We find a trend of decreasing peak energy with increasing quantum well …
Enhancing analogue Unruh effect via superradiance in a cylindrical cavity
HT Zheng, XF Zhou, GC Guo, ZW Zhou - ar** layer location on the electronic and optical properties of GaN step quantum well
H Dakhlaoui - Superlattices and Microstructures, 2016 - Elsevier
In the present work, the intersubband transition and the optical absorption coefficient
between the ground and the first excited states in the Si-δ-doped step AlGaN/GaN quantum …
between the ground and the first excited states in the Si-δ-doped step AlGaN/GaN quantum …
n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
We report on the low-temperature growth of heavily Si-doped (> 10 20 cm− 3) n+-type GaN
by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (< 4× 10− 4 …
by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (< 4× 10− 4 …
Do** dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells
Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in
non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing do** …
non-polar m-plane AlGaN/GaN 10 quantum wells were observed with increasing do** …
Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities
We report a systematic and quantitative study of near-infrared intersubband absorption in
strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted …
strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted …