We proposed and fabricated a current-driven phase-change optical gate switch using a Ge 2
Sb 2 Te 5 (GST225) thin film, an indium–tin-oxide (ITO) heater, and a Si waveguide …

Advancements in nanofabrication processes have propelled nonvolatile phase change
materials (PCMs) beyond storage‐class applications. They are now making headway in …

Thermoelectric effects on phase change memory elements are computationally analyzed
through 2-D rotationally symmetric finite-element simulations of reset operation on a Ge 2 Sb …

During the fast switching in Ge2Sb2Te5 phase change memory devices, both the
amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal …

Phase-change memory (PCM) devices are enabled by amorphization-and crystallization-
induced changes in the devices' electrical resistances. Amorphization is achieved by melting …

Phase change memory (PCM) is an emerging data storage technology; however, its
programming is thermal in nature and typically not energy-efficient. Here, we reduce the …

Phase Change Memory (PCM) is a leading candidate for next generation data storage, but it
typically suffers from high switching (RESET) current density (20–30 MA/cm 2). Interfacial …

High-temperature characterization of the thermoelectric properties of chalcogenide Ge 2 Sb
2 Te 5 (GST) is critical for phase change memory devices, which utilize self-heating to …

We have constructed a framework that enables finite-element modeling of nucleation,
growth, and amorphization processes in phase-change memory devices using a single rate …

The Ge 2 Sb 2 Te 5 and GeTe compounds are of interest for applications in phase change
memories. In the reset process of the memory the crystal is rapidly brought above the …