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CMOS-compatible spintronic devices: a review
For many decades CMOS devices have been successfully scaled down to achieve higher
speed and increased performance of integrated circuits at lower cost. Today's charge-based …
speed and increased performance of integrated circuits at lower cost. Today's charge-based …
Modular approach to spintronics
There has been enormous progress in the last two decades, effectively combining
spintronics and magnetics into a powerful force that is sha** the field of memory devices …
spintronics and magnetics into a powerful force that is sha** the field of memory devices …
A comparative study between spin-transfer-torque and spin-Hall-effect switching mechanisms in PMTJ using SPICE
The spin transfer torque magnetoresistive random access memory (STT-MRAM) is the
leading candidate for spin-based memories. Nevertheless, the high write energy and read …
leading candidate for spin-based memories. Nevertheless, the high write energy and read …
A true random number generator for probabilistic computing using stochastic magnetic actuated random transducer devices
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic
devices, have been used to build true random number generators (TRNGs) with different …
devices, have been used to build true random number generators (TRNGs) with different …
Spin circuit representation for the spin hall effect
Spin circuits with four component voltages and currents have been developed and used in
the past to analyze various structures, which include non-collinear ferromagnets. Recent …
the past to analyze various structures, which include non-collinear ferromagnets. Recent …
Programmable Spin–Orbit‐Torque Logic Device with Integrated Bipolar Bias Field for Chirality Control
Driven by the need to address both the von Neumann bottleneck and scaling limits predicted
by Moore's law, spintronic devices have been shown to be strong contenders for logic‐in …
by Moore's law, spintronic devices have been shown to be strong contenders for logic‐in …
Evaluating the performances of the ultralow power magnetoelectric random access memory with a physics-based compact model of the antiferromagnet/ferromagnet …
Voltage-controlled spintronic devices are considered promising candidates for low-power
applications due to the nonvolatility and the elimination of the Joule heating energy …
applications due to the nonvolatility and the elimination of the Joule heating energy …
Non-volatile latch compatible with static and dynamic CMOS for logic in memory applications
To overcome the performance bottleneck of the CMOS-only logic circuits, logic-in-memory
(LiM)-based circuits can be used. Herein, the memory and logic are combined to reduce the …
(LiM)-based circuits can be used. Herein, the memory and logic are combined to reduce the …
A spin-based true random number generator exploiting the stochastic precessional switching of nanomagnets
In this paper, we propose a spin-based true random number generator (TRNG) that uses the
inherent stochasticity in nanomagnets as the source of entropy. In contrast to previous works …
inherent stochasticity in nanomagnets as the source of entropy. In contrast to previous works …
Solving the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation for monodomain nanomagnets: A survey and analysis of numerical techniques
The stochastic Landau-Lifshitz-Gilbert-Slonczewski (s-LLGS) equation is widely used to
study the temporal evolution of the macrospin subject to spin torque and thermal noise. The …
study the temporal evolution of the macrospin subject to spin torque and thermal noise. The …