This paper presents low-noise amplifiers (LNA) at X-and K-band frequencies in a 0.18-μm
SiGe HBT technology. A method of noise match optimization with respect to base inductance …

This paper presents a K-band low-noise amplifier (LNA) with a measured mean noise figure
of 2.2 dB at 16-24 GHz. The LNA is fabricated in 45 nm Semiconductor-on-Insulator (SOI) …

Design and analysis of a two-stage low-noise amplifier (LNA) and a bottom-series coupled
quadrature voltage-controlled oscillator (QVCO) using a 65-nm CMOS dual-gate device are …

This paper presents the temperature effect on a Ku-band NMOS common-gate low-noise
amplifier (CG-LNA). The temperature characteristics of an NMOS transistor and spiral …

A Ku-band CMOS low-noise amplifier (LNA) with high interference-rejection (IR), wide gain
control range, and low dc power consumption is presented. The LNA consists of two …

A dual-input low noise amplifier (DILNA) topology with pseudo-switch capability is
presented. This novel solution allows us to avoid the use of the RF switch in all cases in …

An experimental low noise FET (LNFET) device is presented in this paper with f_T/f_MAX of
325/475GHz. To authors' knowledge, this is the highest reported f_MAX for a CMOS device …

A 23 GHz electrostatic discharge-protected low-noise amplifier (LNA) has been designed
and implemented by 45 nm planar bulk-CMOS technology with high-Q above-IC inductors …

In this study, design and simulation of 15GHZ and 10GHZ Low Noise Amplifiers (LNA) have
been explored. The simulation has been performed by using the Agilent Advanced Design …

A 4.7-to-6.4 GHz VCO is designed in 45 nm bulk CMOS using an above-IC inductor on top of
the active circuitry, yielding 28% area reduction. The inductor is shielded from the circuitry …