Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
Abstract InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed
in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as …
in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as …
Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
SA Jentsch, MF Zscherp, V Lider… - ACS Applied …, 2025 - ACS Publications
Cubic InGaN alloys are a promising candidate material for next-generation optoelectronic
applications as they lack internal fields and promise to cover large parts of the …
applications as they lack internal fields and promise to cover large parts of the …
Indium segregation in ultra-thin In (Ga) As/GaAs single quantum wells revealed by photoluminescence spectroscopy
A nondestructive approach is described that is applicable for studying the In-segregation
phenomena in ultra-thin In (Ga) As/GaAs nanostructures grown by molecular beam epitaxy …
phenomena in ultra-thin In (Ga) As/GaAs nanostructures grown by molecular beam epitaxy …
The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures
G Tan, ASA Bakar, CS Ooi, O Al-Zuhairi… - Materials Science and …, 2023 - Elsevier
This paper presents the effect of ammonia partial pressure at a relatively low fixed V/III (∼
765) growth atmosphere on the growth of multi-quantum well (MQW) structures and the light …
765) growth atmosphere on the growth of multi-quantum well (MQW) structures and the light …
[PDF][PDF] Estudio de la incorporación de indio en estructuras de pozos cuánticos de materiales III-N por epitaxia de haces moleculares
JI Hernández Martínez - 2022 - repositorio.cinvestav.mx
La energıa de banda prohibida (bandgap) de los materiales semiconductores III-N se puede
variar en un amplio rango de energıa (0.7-6.2 eV) cambiando las concentraciones de Ga, In …
variar en un amplio rango de energıa (0.7-6.2 eV) cambiando las concentraciones de Ga, In …
[CARTE][B] Optical Properties of Ultrathin In (Ga) As/GaAs and In (Ga) N/GaN Quantum Wells
Y Maidaniuk - 2020 - search.proquest.com
Recently, structures based on ultrathin quantum wells (QWs) began to play a critical role in
modern devices, such as lasers, solar cells, infrared photodetectors, and light-emitting …
modern devices, such as lasers, solar cells, infrared photodetectors, and light-emitting …