Recent progress on Ge/SiGe quantum well optical modulators, detectors, and emitters for optical interconnects
Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
the realization of Si-based optical modulators, photodetectors, and light emitters for short …
Optical and magneto-optical behavior of Cerium Yttrium Iron Garnet thin films at wavelengths of 200–1770 nm
Magneto-optical cerium-substituted yttrium iron garnet (Ce: YIG) thin films display Faraday
and Kerr rotation (rotation of light polarisation upon transmission and reflection, respectively) …
and Kerr rotation (rotation of light polarisation upon transmission and reflection, respectively) …
Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection
In this work, we propose Silicon based broad-band near infrared Schottky barrier
photodetectors. The devices operate beyond 1200 nm wavelength and exhibit …
photodetectors. The devices operate beyond 1200 nm wavelength and exhibit …
Fast switching response of Na-doped CZTS photodetector from visible to NIR range
It is important to study the photoconductivity to understand the optoelectronic properties of
semiconductor thin films. Here, we report the effect of Na do** on the photoconductivity …
semiconductor thin films. Here, we report the effect of Na do** on the photoconductivity …
All-silicon microring avalanche photodiodes with a> 65 A/W response
We report an all-Si microring (MRR) avalanche photodiode (APD) with an ultrahigh
responsivity (R) of 65 A/W, dark current of 6.5 µA, and record gain-bandwidth product (GBP) …
responsivity (R) of 65 A/W, dark current of 6.5 µA, and record gain-bandwidth product (GBP) …
Enhanced photoresponse of Cu2ZnSn (S, Se) 4 based photodetector in visible range
Fast switching response of photodetectors is needed for many applications. Therefore, it is
necessary to study the photoconductivity properties of earth abundant and cost effective …
necessary to study the photoconductivity properties of earth abundant and cost effective …
Integration of bulk-quality thin film magneto-optical cerium-doped yttrium iron garnet on silicon nitride photonic substrates
Cerium substituted yttrium iron garnet (Ce: YIG) films were grown on yttrium iron garnet (YIG)
seed layers on silicon nitride films using pulsed laser deposition. Optimal process conditions …
seed layers on silicon nitride films using pulsed laser deposition. Optimal process conditions …
Mechanisms of enhanced sub-bandgap absorption in high-speed all-silicon avalanche photodiodes
All-silicon (Si) photodiodes have drawn significant interest due to their single and simple
material system and perfect compatibility with complementary metal-oxide semiconductor …
material system and perfect compatibility with complementary metal-oxide semiconductor …
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
We demonstrate electroabsorption contrast greater than 5 dB over the entire
telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy …
telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy …
Advances toward Ge/SiGe quantum-well waveguide modulators at 1.3 μm
MS Rouifed, D Marris-Morini… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
The paper reports on the developments of Ge/SiGe quantum well (QW) waveguide
modulators operating at 1.3 μm. Two modulator configurations have been studied: The first …
modulators operating at 1.3 μm. Two modulator configurations have been studied: The first …