Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …

Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …

Multilayer heterostructures composed of a substrate and an epitaxial film are widely utilized
in advanced electronic devices. However, thermal bottlenecks constrain their performance …

Layered delafossite structure CuCrO 2 is a promising candidate for p-type transparent
conducting oxide applications. Copper-rich stoichiometries Cu 1+ δ CrO 2 (δ= 0~ 0.10) …

Silicon nitride based materials have emerged as the promising candidates for high-power
electronics and next-generation gate dielectrics. Herein, the crucial characteristics of …

Thermal transport in wurtzite aluminum nitride (w-AlN) significantly affects the performance
and reliability of corresponding electronic devices, particularly when lattice strains inevitably …

As the size of transistors shrinks and power density increases, thermal simulation has
become an indispensable part of the device design procedure. However, existing works for …

The topological effects of phonons are extensively studied in various materials, which have
the potential to improve heat dissipation in power electronics due to its intrinsic, topologically …

摘要采用密度泛函理论下的第一性原理**面波超软赝势方法, 计算了本征GaN 和不同Lu
掺杂浓度(原子数分数) Ga 1-x Lu x N (x= 0.0625, 0.125, 0.1875, 0.25) 体系的电子结构和光学 …