The many and diverse approaches to materials science problems have greatly enhanced
our ability to engineer the physical properties of semiconductors. Silicon, of all …

Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on< 111>-oriented
silicon substrates by molecular-beam epitaxy. Assuming the so-called “vapor–liquid …

SiGe hetero-structures have a high potential to improve the state-of-art Si devices
particularly VLSIs and add such new functions as optics and also provide a new scientific …

We present a study of photo‐and electroluminescence of SiGe dots buried in Si and
compare them with structures containing smooth SiGe layers. The SiGe dot structures were …

Semiconductor technology has developed considerably during the past several decades.
The exponential growth in microelectronic processing power has been achieved by a …

We report on the formation of Si and SiGe nanowires (NW) by molecular beam epitaxy
(MBE) initiated via gold droplets. The MBE growth behavior essentially differs from the …

Silicon nanowires can be successfully grown by applying the vapor–liquid–solid process. In
the case of the commonly used chemical vapor deposition technique, a Si containing …

Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected
to be building blocks for future devices, eg field-effect transistors or thermoelectric elements …

An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge
superlattice nanowires with diameters below 20 nm is presented. By combining the growth …

Publisher Summary This chapter describes light emission in silicon (Si). The many and
diverse approaches to materials science problems have greatly enhanced ability in recent …