The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory
arrays, can be achieved with an appropriate selector for correct information storage and …

Phase change materials are of great interest as active layers in rewritable optical disks and
novel electronic nonvolatile memories. These applications rest on a fast and reversible …

The successful development of phase change memory technology (PCM) has been one of
the most relevant novelties in the field of semiconductor memories of the last years. PCM …

A combinatorial synthetic methodology based on evaporation sources under an ultrahigh
vacuum has been used to directly synthesize compositional gradient thin film libraries of the …

The crystallization mechanisms of prototypical GeTe phase-change material thin films have
been investigated by in situ scanning transmission electron microscopy annealing …

The material engineering of GeSbTe alloys has led to the significant improvements of
thermal stability, necessary to ensure the data retention of the Phase-Change Memory …

In this work, we reexamine Ge rejection in Ge-rich GeTe thin films with a slight deviation from
stoichiometry using a unique combination of in situ measurements: curvature and x-ray …

The thermoelectric film has broad application potential in the self-power supply of miniature
electrical equipment. In this work, GeTe thermoelectric films were prepared using physical …

The speed at which phase change memory devices can operate depends strongly on the
crystallization kinetics of the amorphous phase. To better understand factors that affect the …

GeTe is an important narrow bandgap semiconductor material and has found application in
the fields of phase change storage as well as spintronics devices. However, it has not been …