Design of wide bandgap (1.7 eV-1.9 eV) III-V dilute nitride quantum-engineered solar cells for tandem application with silicon
K Kharel, A Freundlich - Physics, Simulation, and Photonic …, 2018 - spiedigitallibrary.org
Here we study photovoltaic properties of GaInPNAs based quantum well and superlattice
solar cells, that are either strainbalanced or lattice matched to silicon and evaluate their …
solar cells, that are either strainbalanced or lattice matched to silicon and evaluate their …
Investigation of carrier escape and recombination dynamics in GaAsN/GaAs superlattice and resonantly coupled quantum well solar cells
K Kharel, A Freundlich - Physics, Simulation, and Photonic …, 2018 - spiedigitallibrary.org
III-V multijunction devices that incorporate a dilute nitride 1-1.2 eV bottom cell have already
demonstrated conversion efficiencies of about 44% under high sunlight concentration (942 …
demonstrated conversion efficiencies of about 44% under high sunlight concentration (942 …