Strain-driven composition gradients in nanocrystalline SiGe

Genetic algorithm application to the structural properties of Si–Ge mixed clusters

N Dugan, Ş Erkoç - Materials and Manufacturing Processes, 2009 - Taylor & Francis
Optimum geometries of silicon–germanium (Si–Ge) clusters are found using a single parent
genetic algorithm. 100 atom and 150 atom clusters are studied with some variety of …
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Segregations and desorptions of Ge atoms in nanocomposite Si1− xGex films during high-temperature annealing

Y Wang, M Yang, G Wang, XX Wei, JZ Wang… - Chinese …, 2017 - iopscience.iop.org
Abstract Nanocomposite Si 1− x Ge x films are deposited by dual-source jet-type inductively
coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions …
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