Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights...

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The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature

SA Yerişkin, M Balbaşı, İ Orak - Journal of Materials Science: Materials in …, 2017 - Springer
Abstract Au/n-Si (MS) and Au/(0.07 graphene-PVA)/n-Si (MPS) structures were fabricated on
the same wafer at identical conditions and their electrical characteristics have been …
Mentés Hivatkozás Idézetek száma: 119 Kapcsolódó cikkek Mind a(z) 4 változat

A review on reverse-bias leakage current transport mechanisms in metal/GaN Schottky diodes

H Kim - Transactions on Electrical and Electronic Materials, 2024 - Springer
GaN and related nitride semiconductors have attracted considerable interest for use in solid-
state light and high-power/-frequency devices. Fabrication of high-quality metal/GaN …
Mentés Hivatkozás Idézetek száma: 3 Kapcsolódó cikkek Mind a(z) 3 változat

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide …

ÇŞ Güçlü, AF Özdemir, Ş Altindal - Applied Physics A, 2016 - Springer
In this study, current conduction mechanisms of the sample (Au/Ti)/Al 2 O 3/n-GaAs were
investigated in detail using current–voltage (I–V) measurements in the temperature range of …
Mentés Hivatkozás Idézetek száma: 77 Kapcsolódó cikkek Mind a(z) 4 változat

Effectuality of barrier height inhomogeneity on the current–voltage–temperature characteristics of metal semiconductor structures with CdZnO interlayer

İ Taşçıoğlu, SO Tan, F Yakuphanoğlu… - Journal of Electronic …, 2018 - Springer
Current-conduction/transport mechanisms (CCMs or CTMs) through barrier and barrier
height (BH) formation in the Al/(CdZnO)/p-Si/Al diodes, which were prepared by the sol–gel …
Mentés Hivatkozás Idézetek száma: 56 Kapcsolódó cikkek Mind a(z) 8 változat

The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure

Y Azizian-Kalandaragh, Y Badali… - Physica B: Condensed …, 2023 - Elsevier
In this work, the temperature-dependent (80–360 K) dielectric properties of the Au/ZnO-
PVA/n-Si structure was investigated employing capacitance-voltage (C–V) and conductance …
Mentés Hivatkozás Idézetek száma: 13 Kapcsolódó cikkek Mind a(z) 5 változat
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Current-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K

S Boughdachi, Y Badali, Y Azizian-Kalandaragh… - Journal of Electronic …, 2018 - Springer
In this research, bismuth sulfide nanostructures were prepared in the presence of polyvinyl
alcohol (PVA) as a cap** agent by an ultrasound-assisted method. The x-ray diffraction …
Mentés Hivatkozás Idézetek száma: 46 Kapcsolódó cikkek Mind a(z) 8 változat

Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K)

H Sheoran, JK Kaushik, R Singh - Materials Science in Semiconductor …, 2023 - Elsevier
In this study, we have experimentally investigated the temperature endurance capability of
high-quality Pt-based Schottky Barrier Diodes (SBDs) fabricated on halide vapor phase …
Mentés Hivatkozás Idézetek száma: 7 Kapcsolódó cikkek
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Barrier height inhomogeneities on Pd/n-4H-SiC Schottky diodes in a wide temperature range

VE Gora, FD Auret, HT Danga, SM Tunhuma… - Materials Science and …, 2019 - Elsevier
Barrier height inhomogeneities on Pd/n-type 4H-SiC Schottky barrier diodes in the 300–800
K temperature range have been investigated. Palladium is known to form silicide above 673 …
Mentés Hivatkozás Idézetek száma: 36 Kapcsolódó cikkek Mind a(z) 2 változat

Effect of perylenetetracarboxylic dianhydride on the main electrical properties and interface states of Al/p-Si structures

Ş Karataş - Physica B: Condensed Matter, 2023 - Elsevier
In this our study, we were examined role on the electrical characteristics and interface state
densities of Al/p-type Si metal semiconductor (MS) structures of perylenetetracarboxylic …
Mentés Hivatkozás Idézetek száma: 8 Kapcsolódó cikkek Mind a(z) 2 változat

Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact

R Singh, P Sharma, MA Khan, V Garg… - Journal of Physics D …, 2016 - iopscience.iop.org
The electrical characteristics of Au/MgZnO: Ga (GMZO) Schottky contact, which is fabricated
using a dual ion beam sputtering system, have been investigated using current–voltage (I …
Mentés Hivatkozás Idézetek száma: 56 Kapcsolódó cikkek Mind a(z) 3 változat