Avalanche photodiodes based on the AlInAsSb materials system
SR Bank, JC Campbell, SJ Maddox… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
We report avalanche photodiodes (APDs) fabricated from high-aluminum-content Al x In 1−
x As y Sb 1− y lattice matched to GaSb that is grown within the miscibility gap using a digital …
x As y Sb 1− y lattice matched to GaSb that is grown within the miscibility gap using a digital …
Investigation of AlInAsSb/GaSb tandem cells–A first step towards GaSb-based multi-junction solar cells
III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow
several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys …
several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys …
Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes
Y Lyu, X Han, Y Sun, Z Jiang, C Guo, W **ang… - Journal of Crystal …, 2018 - Elsevier
We report on the growth of high quality GaSb-based AlInAsSb quaternary alloy by molecular
beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high …
beam epitaxy (MBE) to fabricate avalanche photodiodes (APDs). By means of high …
Effect of molecular beam epitaxy growth conditions on phase separation in wide-bandgap InAlAsSb lattice-matched to InP
Abstract In x Al 1-x As 1-y Sb y is the only III-V material lattice-matched to InP with a direct
bandgap energy range as large as~ 1.45–1.80 eV, making it interesting for multiple …
bandgap energy range as large as~ 1.45–1.80 eV, making it interesting for multiple …
On the origin of carrier localization in AlInAsSb digital alloy
WG Zhou, DW Jiang, XJ Shang, DH Wu… - Chinese …, 2023 - iopscience.iop.org
We compared the photoluminescence (PL) properties of AlInAsSb digital alloy samples with
different periods grown on GaSb (001) substrates by molecular beam epitaxy. Temperature …
different periods grown on GaSb (001) substrates by molecular beam epitaxy. Temperature …
Molecular-beam epitaxy of antimonides for optoelectronic devices
E Tournie - Molecular Beam Epitaxy: Materials and Applications …, 2019 - books.google.com
14.1 Introduction k Among III–V semiconductors the so-called “antimonides” refer to the Sb-
rich III–V comk pounds. They include GaSb, InSb, and AlSb which can all be alloyed with …
rich III–V comk pounds. They include GaSb, InSb, and AlSb which can all be alloyed with …
Elastic constants and mechanical stability of InxAl1 − xAsySb1 − y lattice-matched to different substrates
Based on a pseudopotential approach under the virtual crystal approximation, the elastic
modulus of In x Al1− x As y Sb1− y quaternaries lattice-matched to InP, GaSb and InAs …
modulus of In x Al1− x As y Sb1− y quaternaries lattice-matched to InP, GaSb and InAs …
Multi-step Multiplication Structure with Low Excess Noise for the AlInAsSb Avalanche Photodiode
YC Guo, J Yu, W Chen, L Zhu, L Lu - Journal of Electronic Materials, 2024 - Springer
We report on a multi-step multiplication structure to improve avalanche photodiode (APD)
device performance using impact ionization engineering, which optimizes multiplication …
device performance using impact ionization engineering, which optimizes multiplication …
High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
FR Chang, RT Hao, TT Qi, QC Zhao, XX Liu… - Chinese …, 2019 - iopscience.iop.org
In this paper, high material quality Al 0.4 In 0.6 AsSb quaternary alloy on GaSb substrates is
demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray …
demonstrated. The quality of these epilayers is assessed using a high-resolution x-ray …
AlInAsSb for GaSb-based multi-junction solar cells
Bandgap engineering, by means of alloying or inserting nanostructures, is the bedrock of
high efficiency photovoltaics. III-V quaternary alloys in particular enable bandgap tailoring of …
high efficiency photovoltaics. III-V quaternary alloys in particular enable bandgap tailoring of …