A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

Z Liu, W Tang - Journal of Physics D: Applied Physics, 2023 - iopscience.iop.org
Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …

Ultraviolet photodetectors: From photocathodes to low-dimensional solids

A Rogalski, Z Bielecki, J Mikołajczyk, J Wojtas - Sensors, 2023 - mdpi.com
The paper presents the long-term evolution and recent development of ultraviolet
photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly …

High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga2O3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature …

H Sheoran, S Fang, F Liang, Z Huang… - … Applied Materials & …, 2022 - ACS Publications
In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs)
fabricated on metal–organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 …

Enhancing the performance of Self-Powered Deep-Ultraviolet photoelectrochemical photodetectors by constructing α-Ga2O3@ a-Al2O3 Core-Shell nanorod arrays for …

X Wang, K Ding, L Huang, X Li, L Ye, J Luo… - Applied Surface …, 2024 - Elsevier
With the advancement of Ga 2 O 3-based deep-ultraviolet (DUV) photodetectors (PDs), the
integration of PDs into array image sensors has become a sought-after objective. However …

Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

U Varshney, A Sharma, P Vashishtha… - ACS Applied …, 2022 - ACS Publications
The broad-band ultraviolet (BBUV) photodetectors (PDs) responding to multiple ultraviolet
(UV) wavelengths (230–400 nm) have received considerable attention in various fields …

Deformation and fracture behaviors of monocrystalline β-Ga2O3 characterized using indentation method and first-principles calculations

S Gao, X Yang, J Cheng, X Guo, R Kang - Materials Characterization, 2023 - Elsevier
Beta-phase gallium oxide (β-Ga 2 O 3) is a potential candidate due to its ultra-wide bandgap
and physical and chemical stabilities. However, its deformation and fracture behaviors are …

Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3 Deep-Ultraviolet Photodetector

Z Liu, L Du, SH Zhang, L Li, ZY **… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, a metal–semiconductor–metal (MSM)-gallium oxide (Ga2O3) photodetector
(PD) was constructed by microprocessing techniques, including UV photolithography, liftoff …

Ga2O3–MXene Nanowire Networks with Enhanced Responsivity for Deep-UV Photodetection

X Zhu, Y Wu, G Li, K Zhang, S Feng… - ACS Applied Nano …, 2023 - ACS Publications
Ga2O3is a promising semiconductor for solar-blind (200–280 nm) photodetectors. Two-
dimensional (2D) MXenes have been widely applied in the optoelectronic area owing to …

Deep ultraviolet–visible highly responsivity self-powered photodetector based on β-Ga2O3/GaN heterostructure

U Varshney, A Sharma, L Goswami, J Tawale, G Gupta - Vacuum, 2023 - Elsevier
We have reported unique β-Ga 2 O 3 nanoscale-strips (β-Ga 2 O 3-NSS) morphology on
epitaxial Gallium nitride film by thermal oxidation and fabricated heterostructure based self …

Recent development and prospects for metal Selenide-based gas sensors

A Sharma, G Gupta - Materials Science and Engineering: B, 2023 - Elsevier
The discovery of harmful gases has grown increasingly significant regarding environmental
protection, safety, and industrial applications. Traditional gas sensors based on …