N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—
which enables a drastic enhancement in the growth rates of Ga2O3 and related materials to …
which enables a drastic enhancement in the growth rates of Ga2O3 and related materials to …
In desorption in InGaN nanowire growth on Si generates a unique light emitter: from In-Rich InGaN to the intermediate core–shell InGaN to pure GaN
X Pan, H Hong, R Deng, M Luo… - Crystal Growth & …, 2023 - ACS Publications
We study the desorption of In in InGaN nanowire (NW) growth on Si, generating a unique
light emitter. With increasing growth temperature above the onset of In desorption, uniform …
light emitter. With increasing growth temperature above the onset of In desorption, uniform …
Yellow–red emission from (Ga, In) N heterostructures
Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …
to a lesser extent green. Extending their spectral range to longer wavelengths while …
Growth of three-dimensional InGaN nanostructures by plasma-assisted molecular beam epitaxy
A study on the formation of InGaN ternary compounds in the three-dimensional growth mode
is presented. For the first time, we demonstrate that the self-organization during InGaN …
is presented. For the first time, we demonstrate that the self-organization during InGaN …
A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN
CS Gallinat, G Koblmüller, JS Brown… - Journal of Applied …, 2007 - pubs.aip.org
We investigated the role of temperature and In∕ N flux ratios to determine suitable growth
windows for the plasma-assisted molecular beam epitaxy of In-face (0001) InN. Under …
windows for the plasma-assisted molecular beam epitaxy of In-face (0001) InN. Under …
Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption
R Deng, X Pan, H Hong, G Yang, X Pu… - Crystal Growth & …, 2023 - ACS Publications
The growth of InGaN on Si in the regime slightly above the onset of In desorption naturally
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
Photoluminescence redistribution of InGaN nanowires induced by plasmonic silver nanoparticles
Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver
nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles …
nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles …
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN
Real-time analysis of the growth modes during homoepitaxial (0001) GaN growth by plasma-
assisted molecular beam epitaxy was performed using reflection high energy electron …
assisted molecular beam epitaxy was performed using reflection high energy electron …