Although germanium (Ge)(001) has a relatively small surface unit cell, this surface displays
a wealth of fascinating phenomena. The Ge (001) surface is a prototypical example of a …

This review describes advances in understanding the structural, electronic, and chemical
properties of clean low-index semiconductor surfaces during the first decade following the …

Semiempirical potentials for silicon, germanium, and their alloys are derived with use of the
modified-embedded-atom-method formalism. Following Baskes [Phys. Rev. Lett. 59, 2666 …

A phase transition between c (4× 2) and (2× 1) structures on the clean Si (001) surface has
been observed at about 200 K by low energy electron diffraction. From the temperature …

The closely related geometric and electronic structure of the Ge (001) surface have been
investigated with the tunneling microscope. An asymmetric dimer reconstruction is observed …

Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …

The composition and structure of the (001) and (111) surfaces of β-SiC, and the (0001)
surface of 6H-SiC, have been studied using low energy electron diffraction, and Auger and …

The investigation of the finite-size effect in ferroelectric crystals and films has been limited by
the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter …

Photoelectron spectroscopy is the main tool for investigations of the electronic structure of
semiconductor surfaces. By the use of angle-resolved photoemission it has been possible to …

Cubic β-SiC (001) surfaces were cleaned in ultra-high vacuum by heating within a Si atomic
flux, allowing contaminant species to desorb while continuously replenishing volatile surface …