In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

Germanium has long been regarded as a promising laser material for silicon based opto-
electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned …

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

The full exploration of Si-based photonic integrated circuits is limited by the lack of an
efficient light source that is compatible with the complementary metal–oxide–semiconductor …

The application of high values of strain to Ge considerably improves its light emission
properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy …

GeSn alloys with Sn contents of 8.4% and 10.7% are grown pseudomorphically on Ge
buffers on Si (001) substrates. The alloys as-grown are compressively strained, and …

The creation of CMOS compatible light sources is an important step for the realization of
electronic-photonic integrated circuits. An efficient CMOS-compatible light source is …

High n-type do** in germanium is essential for many electronic and optoelectronic
applications especially for high performance Ohmic contacts, lasing and mid-infrared …

We report the demonstration of a germanium waveguide pin photodetector (PD) for the C+ L
band light detection. Tensile strain is transferred into the germanium layer using a SiN …