Enhanced performance and functionality in spintronic sensors
Spintronic sensors are uniquely positioned to deliver the next generation of high-
performance magnetic field measurement tools with re-configurable key features. In this …
performance magnetic field measurement tools with re-configurable key features. In this …
Thermal Atomic Layer Etching of CoO, ZnO, Fe2O3, and NiO by Chlorination and Ligand Addition Using SO2Cl2 and Tetramethylethylenediamine
Thermal atomic layer etching (ALE) of CoO, ZnO, Fe2O3, and NiO was achieved using
chlorination and ligand-addition reactions at 250° C. This two-step process was …
chlorination and ligand-addition reactions at 250° C. This two-step process was …
Thermal atomic layer etching of cobalt using sulfuryl chloride for chlorination and tetramethylethylenediamine or trimethylphosphine for ligand addition
Thermal atomic layer etching (ALE) of cobalt was developed using sulfuryl chloride
(SO2Cl2) for chlorination and either tetramethylethylenediamine (TMEDA) or …
(SO2Cl2) for chlorination and either tetramethylethylenediamine (TMEDA) or …
Plasma atomic layer etching of ruthenium by oxygen adsorption-removal cyclic process
Ruthenium (Ru) is a next-generation metal interconnect material, and the demand for
precise etching is on the rise. This study explores anisotropic atomic layer etching (ALE) of …
precise etching is on the rise. This study explores anisotropic atomic layer etching (ALE) of …
Study on etch characteristics of magnetic tunnel junction materials using rf-biased H2/NH3 reactive ion beam
In order to etch CoFeB and MgO constituting the magnetic tunnel junction (MTJ) layer of
magnetic random access memory, rf-biased reactive ion beam etching (RIBE) with a H2 …
magnetic random access memory, rf-biased reactive ion beam etching (RIBE) with a H2 …
Radical flux control in reactive ion beam etching (RIBE) by dual exhaust system
Radicals generated during reactive ion etching (RIE) cannot be electrically controlled,
causing isotropic etching and chemical damage to the sidewall of the etched feature during …
causing isotropic etching and chemical damage to the sidewall of the etched feature during …
Thermal Atomic Layer Etching of Metals and Metal Oxides: Mechanisms Revealed by Quadrupole Mass Spectrometry
JL Partridge - 2023 - search.proquest.com
As the dimensions of semiconductor devices continue to decrease, these devices require
fundamental changes in architecture in addition to shrinking individual features. These …
fundamental changes in architecture in addition to shrinking individual features. These …