[HTML][HTML] Recent trends in 8–14 μm type-II superlattice infrared detectors
Abstract Type-II superlattices (T2SLs) hold enormous potential for next-generation 8–14 μm
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors
Resistance-voltage curves of n-on-p Hg 1− х Cd x Te long-wavelength infrared photodiodes
forming 128-element array are measured in the temperature range of 40–150 K …
forming 128-element array are measured in the temperature range of 40–150 K …
Modeling of electrical characteristics of midwave type II InAs∕ GaSb strain layer superlattice diodes
This paper reports the results of modeling of electrical characteristics of midinfrared type II In
As∕ Ga Sb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with …
As∕ Ga Sb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with …
Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window
and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength …
and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength …
Accurate simulation of temperature-dependent dark current in HgCdTe infrared detectors assisted by analytical modeling
Resistance–voltage curves of n+-on-p Hg 1− x Cd x Te infrared photodiodes were measured
in the temperature range of 60 K to 120 K. Characteristics obtained experimentally were …
in the temperature range of 60 K to 120 K. Characteristics obtained experimentally were …
Dark current modeling of InP based SWIR and MWIR InGaAs/GaAsSb type-II MQW photodiodes
This paper reports the dark current characteristics of SWIR and MWIR p–i–n photodiodes
with type-II InGaAs/GaAsSb multiple quantum wells as the absorption region. A bulk based …
with type-II InGaAs/GaAsSb multiple quantum wells as the absorption region. A bulk based …
Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application
We report on the optical and electrical performance of optimized InAs/GaSb type-II
superlattice (T2SL). The optical quality of optimal T2SL is compared with InAs/InAsSb T2SL …
superlattice (T2SL). The optical quality of optimal T2SL is compared with InAs/InAsSb T2SL …
Analytical modeling and numerical simulation of P+-Hg0. 69 Cd0. 31Te/n-Hg0. 78Cd0. 22Te/CdZnTe heterojunction photodetector for a long-wavelength infrared free …
ADD Dwivedi - Journal of Applied Physics, 2011 - pubs.aip.org
In this paper an analytical modeling and 2D numerical simulation of P+-Hg 0.69 Cd 0.31
Te/n-Hg 0.78 Cd 0.22 Te/CdZnTe single heterojunction photodetector using the …
Te/n-Hg 0.78 Cd 0.22 Te/CdZnTe single heterojunction photodetector using the …
Effect of dislocations on the zero-bias resistance-area product, quantum efficiency, and spectral response of LWIR HgCdTe photovoltaic detectors
V Gopal, S Gupta - IEEE Transactions on Electron Devices, 2003 - ieeexplore.ieee.org
The effect of dislocations on the zero-bias resistance-area product, quantum efficiency, and
spectral response of long wavelength infrared (LWIR) HgCdTe photodiodes has been …
spectral response of long wavelength infrared (LWIR) HgCdTe photodiodes has been …
Parameter determination from resistance-voltage curve for long-wavelength HgCdTe photodiode
A data-processing approach has been developed to obtain device parameters from
resistance-voltage (RV) curves measured on long-wavelength HgCdTe n-on-p photodiodes …
resistance-voltage (RV) curves measured on long-wavelength HgCdTe n-on-p photodiodes …