This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

This text discusses the physical principles of how and why crystals grow. It introduces the
fundamental properties of crystal surfaces at equilibrium, and describes simple models and …

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals
and applications of strain in semiconductors and semiconductor devices that is relevant for …

The importance of stress and strain effects on surface physics are reviewed. For this purpose
the following points are developed.(1) The elastic, thermodynamics and atomistic definitions …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

▪ Abstract Heteroepitaxial structures with strained semiconductor thin films are widely used
in electronic and optoelectronic devices. One of the more important defect creation …

We study the effect of strain and alloying with Sn on the band structure of Ge using a
combination of ab initio and empirical pseudopotential techniques. The properties …

On a vicinal surface under stress, elastic relaxation at steps produces a long-range attractive
interaction between the steps. As a result, the surface is unstable against step bunching …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …