First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO2 interface
E Tea, J Huang, C Hin - Journal of Physics D: Applied Physics, 2016 - iopscience.iop.org
The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure
mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for …
mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for …
Charge transport mechanism of hydrazine hydrate reduced graphene oxide
R Kumar, A Kaur - 2015 - Wiley Online Library
Chemically assisted graphene oxide (GO) is synthesised by improved Hummers' method. It
has been further reduced by hydrazine hydrate by hydrothermal method to form reduced GO …
has been further reduced by hydrazine hydrate by hydrothermal method to form reduced GO …
Density-functional-theory approach to determine band offsets and dielectric breakdown properties across metal/crystal oxide and metal/amorphous oxide interfaces: A …
J Huang, F Lin, C Hin - Applied Surface Science, 2019 - Elsevier
Amorphous insulating oxides play a significant role in contemporary electronic industry.
Understanding the band alignment of heterogeneous interfaces containing amorphous …
Understanding the band alignment of heterogeneous interfaces containing amorphous …
The MN effect on Electronic, optical and thermoelectric properties of Ti2N graphene: by DFT
MR Khodarahmi, A Boochani, H Khosravi - Chinese journal of physics, 2019 - Elsevier
Electronic, optical and thermoelectric parameters of the Ti 2 N: Mn graphene sheet have
been calculated by the density functional theory (DFT) framework. Our calculations were …
been calculated by the density functional theory (DFT) framework. Our calculations were …
First-Principles Study of Band Alignment and Electronic Structure at Metal/Oxide Interfaces: An Investigation of Dielectric Breakdown
J Huang - 2018 - vtechworks.lib.vt.edu
Oxide dielectric breakdown is an old problem that has been studied over decades. It causes
power dissipations and irreversible damage to the electronic devices. The aggressive …
power dissipations and irreversible damage to the electronic devices. The aggressive …
Band alignment of metal/amorphous-oxide interface using atomic orbitals projection of plane-wave: a first principle study at the Al/a-SiO2 interface
J Huang, F Lin, C Hin - arxiv preprint arxiv:1704.06978, 2017 - arxiv.org
Amorphous insulating oxides play a significant role in the contemporary electronic industry.
Understanding the band alignment of heterogeneous interfaces containing amorphous …
Understanding the band alignment of heterogeneous interfaces containing amorphous …
[CITATION][C] Band alignment of metal/amorphous-oxide interface using atomic orbitals projection of plane-wave
J Huang, F Lin, C Hin