As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …

Power semiconductor devices are utilized as solid-state switches in power electronics
systems, and their overarching design target is to minimize the conduction and switching …

Energy supply and consumption account for approximately 75% of global greenhouse gas
emissions. Advances in semiconductor and power electronics technologies are required to …

We present a-Ga2O3 Trench Schottky Barrier Diode (SBD) featuring a high-permittivity (high-
k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer …

Superjunction (SJ) breaks the performance limit of conventional power devices via
multidimensional electrostatic engineering. Following a commercial success in Si, it has …

Superjunction (SJ) is one of the most innovative concepts in the field of power
semiconductor devices and is often referred to as a" milestone" in power MOS. Its balanced …

The structural design, static, dynamic power losses and short-circuit (SC) robustness of
vertical Ga 2 O 3 planar gate mosfets for medium voltage (3300–6500 V) ratings are first …

Deep mesa is an effective edge termination widely deployed in high-voltage power devices.
However, its effectiveness requires the minimal distance between mesa and electrode edge …

In this paper, a novel superjunction fin-based NiO/β-Ga 2 O 3 heterojunction field-effect
transistor (SJ Fin-HJFET) is proposed and studied by simulations. Compared with the …

Lower specific on-resistance (R on, sp) and higher breakdown voltage (BV) are the primary
goals of silicon carbide (SiC) power devices. This letter establishes a multi-layer floating …