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Assessment of conduction mechanisms through MgO ultrathin barriers in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions
Perpendicular magnetic tunnel junctions (p-MTJs) have been explored for spin transfer
torque magnetic random access memory devices (STT-MRAMs). The current-induced …
torque magnetic random access memory devices (STT-MRAMs). The current-induced …
GaAs manufacturing processes conditions for micro-and nanoscale devices
High aspect-ratio etchings are a key aspect of the fabrication of III–V semiconductor devices.
The increasing demand for diverse geometries with various characteristic lengths (from the …
The increasing demand for diverse geometries with various characteristic lengths (from the …
Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions
One of the critical issues in spintronics‐based technologies is to increase the data storage
density. Current strategy is based on shrinking the devices size down to tens of nanometers …
density. Current strategy is based on shrinking the devices size down to tens of nanometers …
[HTML][HTML] Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier
Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest
because of its unique features in the application of spin-transfer-torque magnetoresistive …
because of its unique features in the application of spin-transfer-torque magnetoresistive …
Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area product
Perpendicular magnetic tunnel junctions (p-MTJs) have attracted great interest due to their
excellent performance in spin-transfer-torque magnetic random access memories (STT …
excellent performance in spin-transfer-torque magnetic random access memories (STT …
The annealing effect on memory state stability and interlayer coupling in perpendicular magnetic tunnel junctions with ultrathin MgO barrier
Perpendicular magnetic tunnel junctions (p-MTJs) attract great interest because of their
excellent performance in spin-transfer-torque magnetic random access memories (STT …
excellent performance in spin-transfer-torque magnetic random access memories (STT …