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Heusler alloys for spintronic devices: review on recent development and future perspectives
Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …
The advantages of using these alloys are good lattice matching with major substrates, high …
Simple rules for the understanding of Heusler compounds
Heusler compounds are a remarkable class of intermetallic materials with 1: 1: 1 (often
called Half-Heusler) or 2: 1: 1 composition comprising more than 1500 members. Today …
called Half-Heusler) or 2: 1: 1 composition comprising more than 1500 members. Today …
Heusler compounds—A material class with exceptional properties
The class of Heusler compounds, including the XYZ and the X 2 YZ compounds, has not
only an endless number of members, but also a vast variety of properties can be found in …
only an endless number of members, but also a vast variety of properties can be found in …
New quarternary half metallic material CoFeMnSi
A good field to develop new materials with half metallicity is the quaternary Heusler alloys.
The preferred route is to combine the compounds that have been already grown in Heusler …
The preferred route is to combine the compounds that have been already grown in Heusler …
Mechanism of large magnetoresistance in devices with current perpendicular to the plane
Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (MR) devices with
half-metallic Co 2 MnSi (CMS) electrodes and a Ag spacer were fabricated to investigate the …
half-metallic Co 2 MnSi (CMS) electrodes and a Ag spacer were fabricated to investigate the …
Extensive study of giant magnetoresistance properties in half-metallic Co2 (Fe, Mn) Si-based devices
Fully epitaxial Co 2 Fe x Mn 1− x Si (CFMS)/Ag/Co 2 Fe x Mn 1− x Si current-perpendicular-
to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer …
to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer …
Large interface spin-asymmetry and magnetoresistance in fully epitaxial Co2MnSi/Ag/Co2MnSi current-perpendicular-to-plane magnetoresistive devices
Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) characteristics were
investigated in a Co 2 MnSi (CMS)/Ag/CMS fully epitaxial device and compared to those in a …
investigated in a Co 2 MnSi (CMS)/Ag/CMS fully epitaxial device and compared to those in a …
Influence of film composition in quaternary Heusler alloy Co2 (Mn, Fe) Si thin films on tunnelling magnetoresistance of Co2 (Mn, Fe) Si/MgO-based magnetic tunnel …
H Liu, T Kawami, K Moges, T Uemura… - Journal of Physics D …, 2015 - iopscience.iop.org
The influence of off-stoichiometry on the half-metallic character of quaternary Heusler alloy
thin films of Co 2 (Mn, Fe) Si (CMFS) was investigated by studying the composition …
thin films of Co 2 (Mn, Fe) Si (CMFS) was investigated by studying the composition …
Perpendicular ferromagnetic resonance measurements of dam** and Land factor in sputtered (CoMn)Ge thin films
X-ray diffraction (XRD), magnetometry, and ferromagnetic resonance (FMR) measurements
were performed on sputtered thin films of the nominal Heusler alloy (Co 2 Mn) 1− x Ge x with …
were performed on sputtered thin films of the nominal Heusler alloy (Co 2 Mn) 1− x Ge x with …
Bulk and interfacial scatterings in current-perpendicular-to-plane giant magnetoresistance with Co2Fe (Al0. 5Si0. 5) Heusler alloy layers and Ag spacer
We report the transport properties of a current-perpendicular-to-plane giant
magnetoresistance (CPP-GMR) device with Co 2 Fe (Al 0.5 Si 0.5)(CFAS) Heusler alloy …
magnetoresistance (CPP-GMR) device with Co 2 Fe (Al 0.5 Si 0.5)(CFAS) Heusler alloy …