[LIBRO][B] Junctionless field-effect transistors: design, modeling, and simulation
A comprehensive one-volume reference on current JLFET methods, techniques, and
research Advancements in transistor technology have driven the modern smart-device …
research Advancements in transistor technology have driven the modern smart-device …
A novel teeth junction less gate all around FET for improving electrical characteristics
In this paper, we propose a novel “Teeth Junctionless Gate All Around Field Effect
Transistor”(TH-JLGAA FET) based on gate engineering method, to obtain finer electrical …
Transistor”(TH-JLGAA FET) based on gate engineering method, to obtain finer electrical …
[LIBRO][B] Modeling nanowire and double-gate junctionless field-effect transistors
F Jazaeri, JM Sallese - 2018 - books.google.com
The first book on the topic, this is a comprehensive introduction to the modeling and design
of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages …
of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages …
Performance analysis of gate electrode work function variations in double-gate junctionless FET
With inherent structural simplicity due to the omission of ultrasteep pn junctions, the
conventional junctionless FET can be used as a barrier-controlled device with low OFF …
conventional junctionless FET can be used as a barrier-controlled device with low OFF …
Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach
N Gowthaman, VM Srivastava - Nanomaterials, 2022 - mdpi.com
In this work, three-dimensional modeling of the surface potential along the cylindrical
surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is …
surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is …
Optimization of gate-stack in junctionless Si-nanotube FET for analog/RF applications
In this work, gate-stack based junctionless Si-nanotube (JLSiNT) FET is studied to
investigate the effect of high-K gate dielectric material in-conjunction with interfacial layer …
investigate the effect of high-K gate dielectric material in-conjunction with interfacial layer …
Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions
In this paper, the analytical investigation of a new design including drain and source
extensions is presented to assess the electrical behavior of cylindrical gate-all-around …
extensions is presented to assess the electrical behavior of cylindrical gate-all-around …
A compact explicit model for long-channel gate-all-around junctionless MOSFETs. Part I: DC characteristics
F Lime, O Moldovan, B Iniguez - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
In this paper, we solved Poisson equation in cylindrical coordinates using approximations to
obtain a compact model for the drain current of long-channel junctionless gate-all-around …
obtain a compact model for the drain current of long-channel junctionless gate-all-around …
Charge-based modeling of double-gate and nanowire junctionless FETs including interface-trapped charges
Nanowire (NW) semiconductors are interesting devices for being used as sensors. Such
NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the …
NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the …
Monolithically Cointegrated Tensile Strained Germanium and InxGa1-xAs FinFETs for Tunable CMOS Logic
R Joshi, S Karthikeyan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, we have evaluated the merits of monolithically cointegrated alternate channel
complementary metal-oxide-semiconductor (CMOS) device architecture, utilizing tensile …
complementary metal-oxide-semiconductor (CMOS) device architecture, utilizing tensile …