Quantum dots are semiconductor nanoparticles containing a range of materials with a core-
shell structure. They receive discernible attention in today's world due to their potential …

The effect of different quantum structures in the intrinsic region of a pin junction solar cell
(SC) on the optical and electrical properties have been investigated. SCs with different …

This paper proposes a new approach to nanoscale patterning of GaAs substrates that allows
formation of subcritical (below the Stranski-Krastanov critical thickness) low-density quantum …

This work investigates the temperature dependence of the performance of In (Ga) As-based
solar cells made from sub-monolayer (SML) quantum dots (QDs), quantum wells (QWs), and …

The results of a study of the optical properties of self-assembled InAs/GaAs (001) quantum
dots (QDs) overgrown under different arsenic pressures, obtained using photoluminescence …

Temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence
(TRPL) of ultrathin InAs quantum wells (QWs) in GaAs matrix have been investigated to …

A nondestructive approach is described that is applicable for studying the In-segregation
phenomena in ultra-thin In (Ga) As/GaAs nanostructures grown by molecular beam epitaxy …

The purpose of this paper is to investigate the effect of the thickness of the wetting layer (WL)
and the number of quantum dots (QDs) on the performance of 1.3 µm QD vertical-cavity …

A direct comparison of the structures of 2D and 3D types of capped stacked submonolayer
(SML) InAs nanostructures is evaluated by transmission electron microscopy (TEM). Results …

Electrically active defects present in three InAs/GaAs quantum dots (QDs) intermediate band
solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices' …