[PDF][PDF] Imaging with mass spectrometry

ML Pacholski, N Winograd - Chemical reviews, 1999 - academia.edu
Imaging mass spectrometry (MS) has created new fundamental research opportunities in
many fields because of its unique ability to acquire molecule-and element-specific pictures …

The Ge (0 0 1) surface

HJW Zandvliet - Physics reports, 2003 - Elsevier
Although germanium (Ge)(001) has a relatively small surface unit cell, this surface displays
a wealth of fascinating phenomena. The Ge (001) surface is a prototypical example of a …

Sputter depth profile analysis of interfaces

S Hofmann - Reports on Progress in Physics, 1998 - iopscience.iop.org
Beginning with some introductory remarks about aims and scope, historical background and
present state of the art, a brief survey of the technique of sputter depth profiling is given. The …

Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation

DJ Barber - Ultramicroscopy, 1993 - Elsevier
The paper reviews the nature of radiation damage produced in inorganic target materials by
sputtering with low-energy ion and atom beams, both in general and for particular types of …

Ultra shallow do** profiling with SIMS

PC Zalm - Reports on Progress in Physics, 1995 - iopscience.iop.org
An overview is given of the possibilities and limitations of secondary ion mass spectrometry
as an analytical tool in the investigation of near-perfect, ie almost atomically sharp, dopant …

Real-time observations of vacancy diffusion on Si (001)-(2× 1) by scanning tunneling microscopy

N Kitamura, MG Lagally, MB Webb - Physical review letters, 1993 - APS
The motion of naturally occurring vacancies on Si (001)-(2× 1) has been investigated in real
time with scanning tunneling microscopy, using a novel method in which repeated line …

Halogen etching of Si via atomic-scale processes

CM Aldao, JH Weaver - Progress in surface science, 2001 - Elsevier
Scanning tunneling microscopy (STM) studies of spontaneous halogen etching of Si (100)-
2× 1 and Si (111) in the range 700–1100 K are reviewed. Although the morphology depends …

Scanning probe microscopy of ion-irradiated materials

R Neumann - Nuclear Instruments and Methods in Physics Research …, 1999 - Elsevier
The modifications of solids induced by irradiation with energetic ions have been the subject
of numerous studies with a large variety of methods, including in particular also microscopy …

Nano-crater formation on a Si (1 1 1)-(7× 7) surface by slow highly charged ion-impact

M Tona, H Watanabe, S Takahashi, N Nakamura… - Surface science, 2007 - Elsevier
Using scanning tunneling microscopy (STM) and time of flight secondary ion mass
spectrometry (TOF/SIMS), we observed radiation effects on a Si (111)-(7× 7) surface in the …

Secondary ion mass spectrometry

PC Zalm - Surface science techniques, 1994 - books.google.com
In secondary ion mass spectrometry, henceforth abbreviated to SIMS, use is made of a
phenomenon called sputtering. When energetic (> 0.1 keV atom') ions, atoms or molecules …