Performance prediction of current-voltage characteristics of Schottky diodes at low temperatures using artificial intelligence
T Güzel, AB Çolak - Microelectronics Reliability, 2023 - Elsevier
Schottky diodes are still one of the most important elements of electronics. Therefore,
investigating the properties of diodes is very important in determining their usage areas. In …
investigating the properties of diodes is very important in determining their usage areas. In …
Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures
B Ofuonye, J Lee, M Yan, C Sun, JM Zuo… - Semiconductor …, 2014 - iopscience.iop.org
High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au
and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN …
and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN …
The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes
In present work, photocurrent, current-voltage (IV) and capacitance/conductance-voltage-
frequency (C/GVf) measurements were analyzed for the photodiode and diode parameters …
frequency (C/GVf) measurements were analyzed for the photodiode and diode parameters …
Graphene-GaN Schottky diodes
The electrical characteristics of graphene Schottky contacts formed on undoped GaN
semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of∼ …
semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of∼ …
Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode
Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN
Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes …
Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes …
Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes
Schottky diode of porous n-GaAs layers have been prepared by chemical etching of n-type
GaAs (100) substrates in (3 and 5) M of phosphoric acid (H3PO4) for 1 min. The influences …
GaAs (100) substrates in (3 and 5) M of phosphoric acid (H3PO4) for 1 min. The influences …
Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact
The electrical characteristics of Au/MgZnO: Ga (GMZO) Schottky contact, which is fabricated
using a dual ion beam sputtering system, have been investigated using current–voltage (I …
using a dual ion beam sputtering system, have been investigated using current–voltage (I …
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes
This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier
diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties …
diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties …
Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode
The temperature dependent electrical characteristics of Se/n-GaN Schottky barrier diode
have been investigated in the temperature range of 130–400 K in the steps of 30 K. The …
have been investigated in the temperature range of 130–400 K in the steps of 30 K. The …
Study on the electrical properties of ZnSe/Si heterojunction diode
ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si
heterojunction. The electrical properties were investigated by current–voltage (I–V) …
heterojunction. The electrical properties were investigated by current–voltage (I–V) …