Gallium selenide (GaSe) is a layered compound, which has been exploited in nonlinear
optical applications and photodetectors due to its anisotropic structure and pseudodirect …

Abstract 2D GaSe is a semiconductor belonging to the group of post‐transition metal
chalcogenides with great potential for advanced optoelectronic applications. The weak …

We report ab initio calculations of the spin splitting of the uppermost valence band (UVB)
and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe and …

The electronic structure of (group-III) metal-monochalcogenide monolayers exhibits many
unusual features. Some, such as the unusually distorted upper valence-band dispersion we …

Inspired by two-dimensional material with their unique physical properties and innovative
device applications, here we report a design framework on monolayer GaSe, an important …

Magnetoconductance (MC) at low temperature was measured to investigate spin-related
transport affected by spin-orbit interaction (SOI) in III-VI compound n-type GaSe thin films …

The photoluminescence (PL) and absorption experiments have been performed in GaSe
slab with incident light polarized perpendicular to c-axis of sample at 10 K. An obvious …

In recent years, two-dimensional (2D) type-II van der Waals (vdW) heterojunctions have
emerged as promising candidates for high-performance photodetectors. However, direct …

We report optical second-harmonic generation (SHG) in reflection from GaSe crystals of 1 to
more than 100 layers using a fundamental picosecond pulsed pump at 1.58 eV and a …

This paper reports an extremely long spin relaxation time of optically polarized light-emitting
states at room temperature in quasi-2D perovskites [(PEA) 2 (MA) 4Pb5Br16 with n= 5] …