Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances
The incubation of strained nano-system in the form of tri-layered structure as nanowire
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
Gate engineered ferroelectric junctionless BioFET for label-free detection of biomolecules
A gate engineered ferroelectric junctionless field-effect transistor biosensor (BioFET) is
proposed and investigated for label-free detection of various biomolecules. A nanocavity is …
proposed and investigated for label-free detection of various biomolecules. A nanocavity is …
Effect of high-k dielectric on drain current of ID-DG MOSFET using Ortiz-Conde model
Drain-to-source current of independently-driven double gate (ID-DG) MOSFET is analytically
computed following Ortiz-Conde model in sub 100 nm channel length in presence of …
computed following Ortiz-Conde model in sub 100 nm channel length in presence of …
Surface potential and mobile charge based drain current modeling of double gate junctionless accumulation mode negative capacitance field effect transistor
An analytical drain current model for double gate junctionless accumulation mode negative
capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the …
capacitance field effect transistor (DG‐JAM‐NC‐FET) has been developed, combining the …
Elemental behaviors of InGaAs surface after treatment in aqueous solutions
J Na, S Lim - Microelectronic Engineering, 2019 - Elsevier
Indium gallium arsenide (InGaAs) is one of the candidates as a channel material for the high-
performance complementary metal-oxide-semiconductor (CMOS) devices superior to silicon …
performance complementary metal-oxide-semiconductor (CMOS) devices superior to silicon …
Two‐dimensional models for quantum effects on short channel electrostatics of lightly doped symmetric double‐gate MOSFETs
RY El Kashlan, H Abd El Hamid… - IET Circuits, Devices & …, 2018 - Wiley Online Library
Analytical Verilog‐A compatible 2D model including quantum short channel effects and
confinement for the potential, threshold voltage and the carrier charge sheet density for …
confinement for the potential, threshold voltage and the carrier charge sheet density for …
Investigating effect of structural parameters on static characteristics of ultrathin DG MOSFET using Taur's model
R Chakraborty, D Mondal, A Deyasi - Information, Photonics and …, 2020 - Springer
Drain current and pinch-off voltage of ultrathin double-gate MOSFET are analytically
calculated based on Taur's model, where the centre potential is derived from Ortiz-Conde …
calculated based on Taur's model, where the centre potential is derived from Ortiz-Conde …
Gate-to-Source Leakage Current Computation in Symmetric Double Gate MOSFET incorporating Short Channel Effects
Gate-to-source leakage current in symmetric double-gate MOSFET is analytically computed
considering the effect of transverse surface electric field and surface charges at both the …
considering the effect of transverse surface electric field and surface charges at both the …
[PDF][PDF] Gate Engineered Ferroelectric Junctionless BioFET for Label-Free Detection of Biomolecules
S Rewari, R Pandey - 2023 - assets-eu.researchsquare.com
Abstract A Gate Engineered Ferroelectric Junctionless BioFET is proposed and investigated
for label-free detection of various biomolecules. A nanocavity is created by etching a part of …
for label-free detection of various biomolecules. A nanocavity is created by etching a part of …
Study on Effect of Si-SiO2 and SiGe-HfO2 to Design 8nm Double Gate MOSFET with Applications
S Kundu, JK Mandal - 2023 IEEE Devices for Integrated Circuit …, 2023 - ieeexplore.ieee.org
In this research an 8 nanometer n-type Double Gate Metal Oxide Semiconductor Field Effect
Transistor (DGMOSFET) has been demonstrated with two different semiconductors (Si and …
Transistor (DGMOSFET) has been demonstrated with two different semiconductors (Si and …