Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements
The hole transport and the carrier distribution in AlGaN-based far-ultraviolett (UVC) light
emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent …
emitting diodes (LEDs) emitting around 233 nm was investigated. Temperature-dependent …
Controlled nano-roughening of the GaN surface by post-growth thermal annealing
GaN-based semiconductor structures have been widely used in photonic, electronic, and
optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN …
optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN …
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect …
The electro‐optical characteristics of deep ultraviolet light‐emitting diodes (DUV LEDs)
emitting at 265 nm and grown on AlN/sapphire templates with different threading dislocation …
emitting at 265 nm and grown on AlN/sapphire templates with different threading dislocation …
[HTML][HTML] Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation
Point defects were controllably introduced into 270 nm AlGaN Light-Emitting Diodes (LEDs)
by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and …
by 5 MeV electron and 1.1 MeV proton irradiations to examine the effect on electrical and …
Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures
The size and density of nanopits, generated at the surface of their top layer, strongly affect
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
[PDF][PDF] Radiative recombination and carrier injection efficiencies in 265 nm deep UV LEDs grown on AlN/sapphire templates with different defect densities
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with emission wavelengths
shorter than 280 nm have multiple applications ranging from disinfection of surfaces,[1, 2, 3] …
shorter than 280 nm have multiple applications ranging from disinfection of surfaces,[1, 2, 3] …
Role of Oxygen Incorporation in High Temperature Annealed AlGaN
High‐temperature annealing (HTA) is a powerful technique to decrease dislocation density
in AlN, which can also be applied on AlGaN. This work investigates the impact of using …
in AlN, which can also be applied on AlGaN. This work investigates the impact of using …
High‐Temperature Annealing of Si‐Doped AlGaN
This study explores the impact of Si do** on the material properties of high‐temperature
annealed (HTA) Al0. 71Ga0. 29N layers, which are grown on AlN/sapphire templates. The …
annealed (HTA) Al0. 71Ga0. 29N layers, which are grown on AlN/sapphire templates. The …
Conductive n-type gallium nitride thin films prepared by sputter deposition
Given the recent increase in the demand for gallium nitride (GaN) in different markets like
optoelectronics and power devices, the request for epitaxially grown GaN will further …
optoelectronics and power devices, the request for epitaxially grown GaN will further …
Impact of Passivation on Thermal Stability of AlGaN/GaN HEMTs Under High-Temperature Annealing
G Zheng, X Chen, L Jiao, Y Wang… - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
This study investigates the 2DEG sheet resistance R_sh of conventional and passivated
AlGaN/GaN HEMT through TLM structures. The impact of high temperature annealing on the …
AlGaN/GaN HEMT through TLM structures. The impact of high temperature annealing on the …