Ion implantation has become a versatile and powerful technique for synthesizing nanometer‐
scale clusters and crystals embedded in the near‐surface region of a variety of hosts in …

Nanoparticle memories have made their point during last years as a possible solution to
overcome the scaling issue of electronic non-volatile memories. Ultimately, we are looking …

Thin SiO 2 oxides implanted by very-low-energy (1 keV) Si ions and subsequently annealed
are explored with regards to their potential as active elements of memory devices. Charge …

In silicon nanocrystal based metal–oxide–semiconductor memory structures, tuning of the
electron tunneling distance between the Si substrate and Si nanocrystals located in the gate …

The effect of annealing in diluted oxygen versus inert environment on the structural and
electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals …

Fabrication of systems in which Si nanoparticles are embedded in a thin silica layer is today
mature for non-volatile memory and opto-electronics applications. The control of the different …

We report measurement of the silicon diffusion coefficient in silicon dioxide films using
isotopically enriched Si 28 silicon dioxide layers that enable relatively low Si 30 …

In this chapter, we will present a digest of the main materials science aspects of the
controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal …

An attractive alternative for extending the scaling of Flash-type memories is to replace the
conventional floating gate (a poly-Si layer) by laterally isolated floating nodes in the form of …

The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of
two-dimensional arrays of Si nanocrystals (NCs) fabricated by ultralow-energy ion …