[책][B] Hierarchical device simulation: the Monte-Carlo perspective
C Jungemann, B Meinerzhagen - 2012 - books.google.com
This book summarizes the research of more than a decade. Its early motivation dates back to
the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte …
the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte …
[책][B] Noise in semiconductor devices
The operation of semiconductor devices is based on charge transport, ie on the motion of
free carriers in the conduction and valence bands. Under the effect of applied external forces …
free carriers in the conduction and valence bands. Under the effect of applied external forces …
A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation
The paper presents a novel, unified technique to evaluate, through physics-based modeling,
the frequency conversion and noise behavior of semiconductor devices operating in the …
the frequency conversion and noise behavior of semiconductor devices operating in the …
Low-frequency drain noise characterization and TCAD physical simulations of GaN HEMTs: Identification and analysis of physical location of traps
NK Subramani, J Couvidat, A Al Hajjar… - IEEE Electron …, 2017 - ieeexplore.ieee.org
In this letter, an investigation of the lowfrequency (LF) drain noise characteristics of the
GaN/AlGaN/GaN HEMT grown on a SiC substrate has been performed. LF drain noise …
GaN/AlGaN/GaN HEMT grown on a SiC substrate has been performed. LF drain noise …
Transport of nonequilibrium carriers in bipolar semiconductors
YG Gurevich, JE Velazquez-Perez… - Journal of applied …, 2007 - pubs.aip.org
In this work we present results concerning the fundamental equations of charge-carrier
transport in semiconductor structures. We discuss a correct modeling of the recombination …
transport in semiconductor structures. We discuss a correct modeling of the recombination …
[PDF][PDF] Generation-recombination noise in semiconductors
Generation-recombination (GR) noise is due to fluctu ations in the number of free carriers
inside of a two terminal sample associated with random transitions of charge carriers …
inside of a two terminal sample associated with random transitions of charge carriers …
The investigations to eliminate the bias dependency of quantum efficiency of InGaAsSb nBn photodetectors for extended short wavelength infrared detection
N Li, W Chen, D Zheng, J Sun, Q Jia, J Jiang… - Infrared physics & …, 2020 - Elsevier
We report our investigations to eliminate the bias dependency of quantum efficiency of nBn
devices based on InGaAsSb bulk alloy aimed for extended short wavelength detection. Both …
devices based on InGaAsSb bulk alloy aimed for extended short wavelength detection. Both …
A comprehensive gate and drain trap**/detrap** noise model and its implications for thin-dielectric MOSFETs
We derive a complete set of expressions for the MOSFET gate and drain power spectral
densities due to elastic and inelastic trap**/detrap** of channel carriers into the gate …
densities due to elastic and inelastic trap**/detrap** of channel carriers into the gate …
Physics-based simulation techniques for small-and large-signal device noise analysis in RF applications
The paper presents a review on physics-based noise simulation techniques for RF
semiconductor devices, starting with the small-signal case but with greater stress on noise in …
semiconductor devices, starting with the small-signal case but with greater stress on noise in …
Negative photoconductance in NiO/B-rGO nanocomposite-based UV photodetector: Structural and Photoelectric properties
The manifestation of uncommon negative photoconductance (NPC) in semiconductor
materials has recently emerged as a significant breakthrough in various research …
materials has recently emerged as a significant breakthrough in various research …