Holes outperform electrons in group IV semiconductor materials
A record‐high mobility of holes, reaching 4.3× 106 cm2 V− 1 s− 1 at 300 mK in an epitaxial
strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported …
strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported …
Quantum transport quality of a processed undoped Ge/SiGe heterostructure
YX Li, Z Kong, S Hou, G Wang, S Huang - Physical Review B, 2023 - APS
A degraded mobility of 5.2× 10 5 cm 2 V− 1 s− 1 but a long quantum scattering time of 2.3 ps
at the hole density of 2.25× 10 11 cm− 2 were obtained from a two-dimensional hole gas in a …
at the hole density of 2.25× 10 11 cm− 2 were obtained from a two-dimensional hole gas in a …
Emergent linear Rashba spin-orbit coupling offers fast manipulation of hole-spin qubits in germanium
The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and
electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical …
electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical …
Spinless composite fermions in an ultrahigh-quality strained Ge quantum well
We report on an observation of a fractional quantum Hall effect in an ultrahigh-quality two-
dimensional hole gas hosted in a strained Ge quantum well. The Hall resistance reveals …
dimensional hole gas hosted in a strained Ge quantum well. The Hall resistance reveals …
Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well
Quantum transport measurements are performed in gate-defined, high-quality, two-
dimensional hole and electron systems in an undoped InSb quantum well. For both …
dimensional hole and electron systems in an undoped InSb quantum well. For both …
[HTML][HTML] Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium
C Morrison, M Myronov - Applied Physics Letters, 2017 - pubs.aip.org
The anisotropic nature of carrier mobility in simple cubic crystalline semiconductors, such as
technologically important silicon and germanium, is well understood as a consequence of …
technologically important silicon and germanium, is well understood as a consequence of …
Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas
C Morrison, C Casteleiro, DR Leadley… - Applied Physics …, 2016 - pubs.aip.org
The complex quantum transport of a strained Ge quantum well (QW) modulation doped
heterostructure with two types of mobile carriers has been observed. The two dimensional …
heterostructure with two types of mobile carriers has been observed. The two dimensional …
Strained germanium for applications in spintronics
C Morrison, M Myronov - physica status solidi (a), 2016 - Wiley Online Library
Germanium (Ge) is another group‐IV semiconductor material, which recently started
attracting tremendous attention in spintronics following success of silicon (Si). The crystal …
attracting tremendous attention in spintronics following success of silicon (Si). The crystal …
Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
D Weißhaupt, C Sürgers, D Bloos… - Semiconductor …, 2024 - iopscience.iop.org
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells
represent a promising material platform for future spintronic applications due to their …
represent a promising material platform for future spintronic applications due to their …
Quantum Transport in InSb Quantum Well Devices: Progress and Perspective
InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …