This article explores group-IV germanium (Ge) quantum dots (QDs) on silicon-on-insulator
(SOI) grown by molecular beam epitaxy (MBE) in order to explore their optical behavior in …

Exotic optical responses of designed metasurfaces, including non‐Hermitian photonic
systems exhibiting exceptional point (EP)‐singularities, offer diverse applications in the field …

Metal sulfide semiconductor photocatalysts have been widely used in photocatalytic
hydrogen evolution reactions due to their good light absorption properties and high …

The performance of dual‐gate GaAs‐nanowire field‐effect‐transistor (FET) is investigated as
a charge‐qubit device operating at room temperature. In compatibility with the state‐of‐the …

Ribbons of two-dimensional lattices have properties depending sensitively on the
morphology of the two edges. For regular ribbons with two parallel straight edges, the atomic …

Over the years, system on chip (SoC) designs have evolved extensively sophisticated in
order to fulfil the need of increasing complexity of running applications driven by the …

We study the exciton states in the symmetrically biased dice model, the electronic structures
of which have an isolated flat band between two dispersive bands. At 1/3 or 2/3 filling, the …

We report the fabrication of an array of highly scaled Ge-nanowire-based (radius∼ 25 nm)
vertical metal-oxide-semiconductor devices that can operate as voltage-tunable quantum …

In the pursuit of room temperature quantum hardware, our study introduces a gate voltage
tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate …

The current work explores a geometrically engineered dual gate GaAs nanowire FET with
state of the art miniaturized dimensions for high performance charge qubit operation at room …