Optoelectronic device simulations based on macroscopic Maxwell–Bloch equations
Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic
Maxwell–Bloch (MB) equations are a widely used semiclassical and semi …
Maxwell–Bloch (MB) equations are a widely used semiclassical and semi …
The justification for applying the effective-mass approximation to microstructures
MG Burt - Journal of Physics: Condensed Matter, 1992 - iopscience.iop.org
The assumptions of conventional effective-mass theory, especially the one of continuity of
the envelope function at an abrupt interface, are reviewed critically so that the need for a …
the envelope function at an abrupt interface, are reviewed critically so that the need for a …
Local probe techniques for luminescence studies of low-dimensional semiconductor structures
With the rapid development of technologies for the fabrication of, as well as applications of
low-dimensional structures, the demands on characterization techniques increase. Spatial …
low-dimensional structures, the demands on characterization techniques increase. Spatial …
[BOOK][B] Nanostructures: theory and modeling
CJ Delerue, M Lannoo - 2013 - books.google.com
Progress in nanoscience is becoming increasingly dependent on simulation and modelling.
This is due to a combination of three factors: the reduced size of nano-objects, the …
This is due to a combination of three factors: the reduced size of nano-objects, the …
Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers
D Gershoni, CH Henry, GA Baraff - IEEE journal of quantum …, 1993 - ieeexplore.ieee.org
A method for calculating the electronic states and optical properties of multidimensional
semiconductor quantum structures is described. The method is applicable to …
semiconductor quantum structures is described. The method is applicable to …
Optical properties of zinc-blende semiconductor alloys: Effects of epitaxial strain and atomic ordering
Spontaneous ordering of III-V alloys is known to cause a band-gap reduction‖ Δ E g‖ and
a splitting Δ E 12 of the valence-band maximum. Strain also leads to a valence-band …
a splitting Δ E 12 of the valence-band maximum. Strain also leads to a valence-band …
Applicability of the method to the electronic structure of quantum dots
The k⋅ p method has become the “standard model” for describing the electronic structure of
nanometer-size quantum dots. In this paper we perform parallel k⋅ p (6× 6 and 8× 8) and …
nanometer-size quantum dots. In this paper we perform parallel k⋅ p (6× 6 and 8× 8) and …
Nonlinear elasticity in III-N compounds: Ab initio calculations
We have studied the nonlinear elasticity effects in zinc-blende and wurtzite crystallographic
phases of III-N compounds. Particularly, we have determined the pressure dependences of …
phases of III-N compounds. Particularly, we have determined the pressure dependences of …
Nonradiative Auger recombination in semiconductor nanocrystals
We calculate the rate of nonradiative Auger recombination in negatively charged CdSe
nanocrystals (NCs). The rate is nonmonotonic, strongly oscillating with NC size, and …
nanocrystals (NCs). The rate is nonmonotonic, strongly oscillating with NC size, and …
Measured and calculated radiative lifetime and optical absorption of quantum structures
We apply photoluminescence, photoluminescence excitation, and time-resolved optical
spectroscopy for studying a set of In x Ga 1− x N/G a N periodic structures, which were …
spectroscopy for studying a set of In x Ga 1− x N/G a N periodic structures, which were …