Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …

Solid-state batteries are on the roadmap for commercialization as the next generation of
batteries because of their potential for improved safety, power density, and energy density …

Perovskite/silicon tandem solar cells promise power conversion efficiencies beyond the
Shockley–Queisser limit of single-junction devices; however, their actual outdoor …

We present a new type of large-scale computational screening approach for identifying
promising candidate materials for solid state electrolytes for lithium ion batteries that is …

Low-dimensional nanomaterials have been explored extensively in the last decades, partly
fuelled by the new possibilities for tuning and controlling their electronic properties. In a …

Physics ruling the temperature sensitivity of photovoltaic (PV) cells is discussed.
Dependences with temperature of the fundamental losses for single junction solar cells are …

Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

Abstract Metal-oxide-semiconductor (MOS) devices are affected by generation,
transformation, and charging of oxide and interface defects. Despite 50 years of research …