Low-K dielectric gapfill by flowable deposition
KV Thadani, J Liang, YS Lee, M Srinivasan - US Patent 9,412,581, 2016 - Google Patents
Methods are described for forming a flowable low-k dielec tric layer on a patterned substrate.
The film may be a silicon carbon-oxygen (Si-CO) layer in which the silicon and carbon …
The film may be a silicon carbon-oxygen (Si-CO) layer in which the silicon and carbon …
Remote plasma burn-in
J Liang, L Ji, NK Ingle - US Patent 8,551,891, 2013 - Google Patents
Methods of treating the interior of a plasma region are described. The methods include a
preventative maintenance procedure or the start-up of a new substrate processing chamber …
preventative maintenance procedure or the start-up of a new substrate processing chamber …
Remote plasma source seasoning
S Park, S Jeon, TQ Tran, JG Yang, Q Liang… - US Patent …, 2011 - Google Patents
Methods of seasoning a remote plasma system are described. The methods include the
steps of flowing a silicon-containing precursor into a remote plasma region to deposit a …
steps of flowing a silicon-containing precursor into a remote plasma region to deposit a …
Formation of silicon oxide using non-carbon flowable CVD processes
J Liang, NK Ingle, S Venkataraman - US Patent 8,741,788, 2014 - Google Patents
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL;
CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; …
CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; …
Polysilicon films by HDP-CVD
A Wang, X Chen, YS Lee - US Patent 8,450,191, 2013 - Google Patents
2002/0079523 A1 6/2002 Zheng et a1. 2006/0068599 A1 3/2006 Baek et a1. 2002/0081817
A1 6/2002 Bhakta et a1. 2006/0075966 A1 4/2006 Chen et a1. 2002/0086166 A1 7/2002 …
A1 6/2002 Bhakta et a1. 2006/0075966 A1 4/2006 Chen et a1. 2002/0086166 A1 7/2002 …
Two silicon-containing precursors for gapfill enhancing dielectric liner
S Bhatia, H Hamana, PE Gee… - US Patent …, 2014 - Google Patents
5,110.407 5,212,119 5,271,972 5,279,784 5,364,488 5,393,708 5.426, 076 5.434, 109
5,468,687 5,485,420 5,530,293 5,547,703 5,558,717 5,578,532 5,587,014 5,593,741 …
5,468,687 5,485,420 5,530,293 5,547,703 5,558,717 5,578,532 5,587,014 5,593,741 …
Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
NK Ingle, Z Yuan, P Gee, K Sapre - US Patent 7,825,038, 2010 - Google Patents
5,691,009 A 11/1997 Sandhu 2002fO164891 A1 11/2002 Gates et al. 5,786.263 A 7, 1998
Perera 2003, OO64154 A1 4/2003 Laxman et al. 5,853,607 A 12/1998 Zhao et al …
Perera 2003, OO64154 A1 4/2003 Laxman et al. 5,853,607 A 12/1998 Zhao et al …
Method and system for improving dielectric film quality for void free gap fill
AB Mallick, JC Munro, L Wang, SD Nemani… - US Patent …, 2009 - Google Patents
(57) ABSTRACT A method of forming a silicon oxide layer on a Substrate. The method
includes providing a substrate and forming a first silicon oxide layer overlying at least a …
includes providing a substrate and forming a first silicon oxide layer overlying at least a …
Method for depositing and curing low-k films for gapfill and conformal film applications
JC Munro, SD Nemani - US Patent 7,790,634, 2010 - Google Patents
4,147,571 A 4/1979 Stringfellow et al. 4,816,098 A 3, 1989 Davis et al. 4,818,326 A 4, 1989
Liu et al. 5,016,332 A 5, 1991 Reichelderfer et al. 5,110.407 A 5, 1992 Ono et al …
Liu et al. 5,016,332 A 5, 1991 Reichelderfer et al. 5,110.407 A 5, 1992 Ono et al …
Atomic layer deposition processes for non-volatile memory devices
Y Ma, SS Kher, K Ahmed, T Goyani… - US Patent …, 2010 - Google Patents
Embodiments of the invention provide memory devices and methods for forming memory
devices. In one embodiment, a memory device is provided which includes a floating gate …
devices. In one embodiment, a memory device is provided which includes a floating gate …