Gallium oxide-based solar-blind ultraviolet photodetectors
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …
semiconducting material as a key building block for the applications of power electronics …
Recent progress of deep ultraviolet photodetectors using amorphous gallium oxide thin films
H Liang, Z Han, Z Mei - physica status solidi (a), 2021 - Wiley Online Library
Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields.
Many materials have been explored to realize deep UV photodetection. Amorphous gallium …
Many materials have been explored to realize deep UV photodetection. Amorphous gallium …
High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium–tin–oxide electrodes
C Zhang, K Liu, Q Ai, X Sun, X Chen, J Yang… - Materials Today …, 2023 - Elsevier
Transparent ultraviolet (UV) photodetectors have attracted the increasing attention due to
their giant potential in integrated transparent electronics applications. In this work, a fully …
their giant potential in integrated transparent electronics applications. In this work, a fully …
[HTML][HTML] Improved response speed of β-Ga2O3 solar-blind photodetectors by optimizing illumination and bias
Abstract Ga 2 O 3-based solar-blind ultraviolet photodetectors (PDs) have stimulated
extensive attention for covering both civilian and military applications. During the past …
extensive attention for covering both civilian and military applications. During the past …
Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga2O3/NiO Heterojunctions
In recent years, β-Ga2O3/NiO heterojunction diodes have been studied, but reports in the
literature lack an investigation of an epitaxial growth process of high-quality single …
literature lack an investigation of an epitaxial growth process of high-quality single …
Performance improvement of amorphous Ga2O3 ultraviolet photodetector by annealing under oxygen atmosphere
C Zhou, K Liu, X Chen, J Feng, J Yang, Z Zhang… - Journal of Alloys and …, 2020 - Elsevier
We have demonstrated the fast-speed and high-rejection-ratio solar-blind ultraviolet (UV)
photodetectors based on amorphous Ga 2 O 3 (a-Ga 2 O 3) films grown by atomic layer …
photodetectors based on amorphous Ga 2 O 3 (a-Ga 2 O 3) films grown by atomic layer …
Ti3C2/ϵ-Ga2O3 Schottky Self-Powered Solar-Blind Photodetector With Robust Responsivity
As a 2D material, MXene has emerged as an excellent electrode material for optoelectronic
devices due to its high conductivity and hydrophilic surface. Here, the Ti 3 C 2-based MXene …
devices due to its high conductivity and hydrophilic surface. Here, the Ti 3 C 2-based MXene …
Room temperature fabrication and post-annealing treatment of amorphous Ga2O3 photodetectors for deep-ultraviolet light detection
T Zhang, D Guan, N Liu, J Zhang, J Zhang… - Applied Physics …, 2022 - iopscience.iop.org
This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-
semiconductor-metal structure based on radio-frequency sputtered amorphous Ga 2 O 3 …
semiconductor-metal structure based on radio-frequency sputtered amorphous Ga 2 O 3 …
Carrier Transport and Gain Mechanisms in –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors
In this paper, carrier transport and gain mechanisms are exploited in the β-Ga 2 O 3-based
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …
Solar-blind self-powered photodetector using solution-processed amorphous core–shell gallium oxide nanoparticles
Solution-processed deep ultraviolet (DUV) photodetectors based on wide band gap oxide
semiconductors (WBGS) working in the< 280 nm wavelength range are drawing increasing …
semiconductors (WBGS) working in the< 280 nm wavelength range are drawing increasing …